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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « R. H. Wu »
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R. H. Liu < R. H. Wu < R. H. Yu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001747 (2005) Room temperature 1.25 μm emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy
001776 (2005) Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells
001A55 (2003-12-15) Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices
001F10 (2001) Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
001F20 (2001) Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
001F85 (2000-12-18) Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells
002007 (2000-07-10) Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Gallium arsenides
6Experimental study
4III-V semiconductors
4Indium arsenides
4Molecular beam epitaxy
4Photoluminescence
3Crystal growth from vapors
3Gallium compounds
3Indium compounds
3Quantum wells
3Thin films
2Band structure
2Gallium nitrides
2Indium nitrides
2Nanostructured materials
2Semiconductor epitaxial layers
1Absorption spectra
1Alignment
1Bilayers
1Binary compounds
1Buffer layer
1Composition effect
1Computerized simulation
1Conduction bands
1Crystal perfection
1Desorption
1Effective mass
1Energy-level transitions
1Fabrication structure relation
1Free radical reactions
1Gallium antimonides
1Interband transitions
1Interface states
1Localized states
1Monte Carlo methods
1Multilayers
1Multiple quantum well
1Operating mode
1Optical transition
1Photoreflectance
1Photovoltaic effects
1Plasma deposition
1Plasma sources
1Pseudopotential methods
1Quaternary compounds
1Reaction kinetics theory
1Semiconductor growth
1Semiconductor materials
1Semiconductor quantum wells
1Semiconductor superlattices
1Solid source molecular beam epitaxy
1Stoichiometry
1Strained quantum well
1Surface segregation
1Temperature dependence
1Ternary compounds
1Theoretical study
1Thickness
1Wide band gap semiconductors

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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