Serveur d'exploration sur l'Indium - Analysis (Chine)

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List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000108 (2013) Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing
000192 (2013) Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors
000205 (2013) Influence of Tungsten Doping on the Performance of Indium-Zinc-Oxide Thin-Film Transistors
000804 (2011) Influences of channel metallic composition on indium zinc oxide thin-film transistor performance
000930 (2011) Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition
000954 (2011) Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers
000F56 (2009) Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target
000F90 (2008) Tungsten-doped In2O3 transparent conductive films with high transmittance in near-infrared region
001199 (2008) Dependence of electrical and optical properties on thickness of tungsten-doped indium oxide thin films
001415 (2007) Energy band alignment of an In2O3: Mo/Si heterostructure
001504 (2006) Transparent conductive oxide thin films of tungsten-doped indium oxide
001506 (2006) Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature
001708 (2005) The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target

List of associated KwdEn.i

Nombre de
documents
Descripteur
7Doping
7Electrical conductivity
6Cathode sputtering
6Indium oxide
6Thin films
5Carrier mobility
4Carrier density
4Indium oxides
4Optical properties
4Thin film transistor
3Amorphous material
3Molybdenum additions
3Oxygen
3Reactive sputtering
3Transmittance
3Tungsten additions
3Tungsten oxide
3Zinc oxide
2Absorption coefficients
2Absorption spectra
2Amorphous state
2Electrical measurement
2Electrical properties
2IV characteristic
2Indium additions
2Near infrared radiation
2Performance evaluation
2Physical vapor deposition
2Plasma deposition
2Preferred orientation
2Rectification
2Semiconductor materials
2Surface morphology
2Thin film
2Voltage threshold
2XRD
1Activation energy
1Aluminium oxide
1Amorphous semiconductors
1Annealing
1Atomic force microscopy
1Band offset
1Band structure
1Binary compounds
1CV characteristic
1Cathodic sputtering
1Copper oxide
1Dielectric materials
1Double layers
1Drain current
1Electric resistivity
1Electrical characteristic
1Energy-level transitions
1Experimental study
1Fourier-transformed infrared spectrometry
1Gallium Indium Zinc Oxides Mixed
1Growth from vapor
1Hall mobility
1Heat treatment
1Heterostructures
1Infrared irradiation
1Infrared spectra
1Junction diodes
1Layer thickness
1Light transmission
1Magnetrons
1Microelectronic fabrication
1Nickel additions
1Ohmic contacts
1On off effect
1Optimization
1Oxide layer
1Partial pressure
1Photoconductivity
1Plasma assisted processing
1Polycrystals
1Potential well
1Preparation
1Radiofrequency
1Roughness
1Scanning electron microscopy
1Silicon
1Sol-gel process
1Sputter deposition
1Sputtering
1Styrene(hydroxy) polymer
1Thin film transistors
1Three-level systems
1Tin oxide
1Transparency
1Transparent material
1Tungsten
1Tungsten oxides
1Vacancy
1X ray diffraction
1X-ray diffraction analysis
1X-ray photoelectron spectra
1Zinc

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