Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « QINSHENG ZHU »
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QINQIN LIU < QINSHENG ZHU < QINZE LIU  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000059 (2013) Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells
000518 (2012) Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
000785 (2011) MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
000C62 (2009) Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution
001183 (2008) Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
001674 (2006) Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
001952 (2004) Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition
001A29 (2004) Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure
001A34 (2004) Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition
001B43 (2003) Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
001D18 (2002) The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method

List of associated KwdEn.i

Nombre de
documents
Descripteur
8MOCVD
6Gallium nitrides
5Experimental study
5III-V semiconductors
5Indium nitrides
5Photoluminescence
5XRD
4CVD
4Crystal growth from vapors
4Quantum dots
3Aluminium nitrides
3Buffer layer
3Gallium nitride
3III-V compound
3Indium nitride
3Morphology
3Multilayers
3Passivation
3Surface morphology
2Atomic force microscopy
2Binary compounds
2Characterization
2Crystal structure
2Doping
2Growth mechanism
2Indium additions
2Interlayers
2Low pressure
2Low temperature
2Monocrystals
2Nanostructured materials
2Nanostructures
2Ternary compounds
2Thin films
2Two-dimensional electron gas
1Activation energy
1Anisotropy
1Annealing
1Band structure
1Blue shift
1Carrier mobility
1Charge carriers
1Charge transfer
1Compressive stress
1Crystal morphology
1Crystal perfection
1Crystallinity
1Crystallography
1Diffusion
1Digital simulation
1Dimension spectrum
1Dislocations
1Dispersive spectrometry
1Doped materials
1Electron microscopy
1Electron mobility
1Electron-defect interactions
1Electronic properties
1Energy dispersive spectroscopy
1Energy gap
1Epitaxial layers
1Epitaxy
1Heterostructures
1High density
1IV characteristic
1Indium
1Interfaces
1Interfacial layer
1Interrupts
1Lateral growth
1Lattice parameters
1Line widths
1Multistep method
1Nanomaterial synthesis
1Nanometer scale
1Nanopatterning
1Nanorod
1Optical materials
1Optical microscopy
1Optical properties
1Optoelectronic devices
1Poisson equation
1Potential well
1Quantity ratio
1Quantum wells
1Quaternary compounds
1RBS
1Raman spectroscopy
1Rocking curve
1Scanning electron microscopy
1Schroedinger equation
1Self consistency
1Self-assembled layers
1Semiconductor materials
1Silicon
1Spectral line shift
1Square-well potential
1Stacking sequence
1Strained layer
1Stress relaxation

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