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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Q. Huang »
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Q. Huan < Q. Huang < Q. J. Jia  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000909 (2011) Effect of acetic acid on ZnO:In transparent conductive oxide prepared by ultrasonic spray pyrolysis
001595 (2006) Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy
001609 (2006) InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
001831 (2005) Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy
001922 (2004) Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique
001976 (2004) Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source
001992 (2004) Influence of threading dislocations on the properties of InGaN-based multiple quantum wells
001A23 (2004) Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas
001B47 (2003) Strain relaxation of InAs epilayer on GaAs under In-rich conditions
001B53 (2003) Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates
001C17 (2003) Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells
001C18 (2003) Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells
002047 (2000) Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer
002351 (1998) The self-organized In0-25Ga0-75As quantum dots grown by migration enhanced epitaxy
002380 (1998) Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
12Experimental study
11III-V semiconductors
10Photoluminescence
9Molecular beam epitaxy
7Crystal growth from vapors
7Gallium arsenides
7Indium arsenides
6Epitaxial layers
5Ternary compounds
5Thin films
5XRD
4Atomic force microscopy
4Buffer layer
4Temperature dependence
3Electrical properties
3Gallium nitrides
3Heteroepitaxy
3Indium nitrides
3Multilayers
3Multiple quantum well
3RHEED
3Roughness
2Aluminium arsenides
2Binary compounds
2Carrier density
2Carrier mobility
2Crystal perfection
2Doping
2Fabrication property relation
2Growth mechanism
2Hall effect
2In situ
2Migration
2Mismatch lattice
2Non radiative recombination
2Operating mode
2Optical properties
2Precursor
2Quantum dots
2Raman spectra
2Semiconductor materials
2Surface morphology
2Thickness
1Acetic acid
1Active layer
1Adatoms
1Ammonia
1CVD
1Chemical composition
1Controlled atmospheres
1Critical value
1Crystal growth
1Decomposition
1Electron mobility
1Energy gap
1Epitaxial film
1Fabrication structure relation
1Flow(fluid)
1Gallium phosphide
1Gallium phosphides
1Gas phase
1Hall mobility
1Heterojunction bipolar transistors
1Heterojunctions
1Indium
1Indium Organic compounds
1Indium additions
1Indium antimonides
1Indium oxide
1Indium phosphide
1Indium phosphides
1Line width
1Line widths
1Localization
1Low pressure
1Low temperature
1MEE method
1MOCVD
1Metamorphism
1Misfit dislocations
1Nanostructured materials
1Optimization
1Phonons
1Planar doping
1Pretreatment
1Pyrolysis
1Quantum wells
1Raman scattering
1Rocking curve
1Self organization
1Size effect
1Solid solutions
1Spray coatings
1Stress relaxation
1Structure relaxation
1Surface diffusion
1TEM
1Temperature effects
1Thick films
1Transmittance

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