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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Q. Gong »
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Q. G. Yao < Q. Gong < Q. H. Hua  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000242 (2013) Growth of metamorphic InGaP layers on GaAs substrates
000378 (2012) Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
000463 (2012) Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy
000730 (2011) Quantum dot lasers grown by gas source molecular-beam epitaxy
000B26 (2010) InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy
000E48 (2009) Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy
001351 (2007) Multiple confined-state transitions within surface quantum dots by a piezomodulation reflectance study
002059 (2000) Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
002265 (1999) Indium composition dependence of size uniformity of InGaAs quantum dots on (311)B GaAs grown by means of molecular beam epitaxy
002391 (1998) InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy
002426 (1998) Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy
002441 (1997-11) Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Molecular beam epitaxy
9Indium arsenides
7Gallium arsenides
7Quantum dots
6GSMBE method
6III-V semiconductors
5III-V compound
5Photoluminescence
4Binary compounds
4Continuous wave
4Experimental study
4Quantum dot lasers
3Growth mechanism
3Monolayers
3Nanostructured materials
3Semiconductor lasers
3Semiconductor materials
3Temperature dependence
2Aluminium arsenides
2Crystal growth from vapors
2Epitaxial layers
2Heteroepitaxy
2Indium phosphide
2Island structure
2Layer thickness
2Quantum wells
2Ridge waveguides
2Ternary compounds
2Waveguide lasers
2XRD
1Aluminium compounds
1Antimony
1Application
1Atomic force microscopy
1Calcium nitride
1Coherent three dimensional islands
1Confinement
1Density of states
1Energy-level transitions
1Experiments
1Fabricating uniform dense quantum dots
1Fourier transform spectra
1Gallium antimonides
1High electron mobility transistors
1Indium
1Indium antimonides
1Indium composition
1Indium compounds
1Infrared detectors
1Injection current
1Interfaces
1Line shape
1Low temperature
1Microelectronic fabrication
1Morphology
1Nanometer scale
1Operating conditions
1Optimization
1Output power
1Phosphides
1Photodiodes
1Quantum well lasers
1Quantum yield
1Reflection spectrum
1Reflectivity
1Roughness
1Self assembly
1Semiconducting gallium arsenide
1Size effect
1Stress effects
1Superlattices
1TEM
1Temperature effects
1Tensile stress
1Thermal characteristic
1Thin films
1Threading dislocation
1Transmission electron microscopy

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