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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « PEIDE HAN »
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PEIDA YE < PEIDE HAN < PEIDE HANG  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000296 (2013) Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature
001952 (2004) Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition
001B43 (2003) Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
001D19 (2002) The mechanism of blueshift in excitation-intensity-dependent photoluminescence spectrum of nitride multiple quantum wells
001D37 (2002) Statistical investigation on morphology development of gallium nitride in initial growth stage
001E10 (2002) A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition
001F32 (2001) Indium doping effect on GaN in the initial growth stage

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
6Gallium nitrides
5Crystal growth from vapors
4III-V semiconductors
4Indium nitrides
3CVD
3Indium additions
3Low pressure
3MOCVD
3Morphology
3Passivation
3Photoluminescence
3Quantum dots
3Thin films
2Characterization
2Crystal doping
2Growth mechanism
2Low temperature
2MOVPE method
2Multilayers
2Ternary compounds
2VPE
1Activation energy
1Amorphous material
1Annealing temperature
1Atomic force microscopy
1Binary compounds
1Carrier density
1Charge carriers
1Charge transfer
1Crystal nucleation
1Crystal perfection
1Crystalline material
1Crystallinity
1Damage
1Dimension spectrum
1Donor center
1Doped materials
1Doping
1Energy barrier
1Energy gap
1Excitation intensity
1Excitons
1Impurity effect
1Ion implantation
1Localized states
1Microelectronic fabrication
1Multiple quantum well
1Nanostructured materials
1Optoelectronic devices
1Optoelectronic properties
1Optoelectronics
1Phase transitions
1Quantum yield
1Rectification
1Roughness
1Selenium
1Semiconductor materials
1Silicon
1Spectral line shift
1Stacking sequence
1Statistical analysis
1Superlattices
1Surface diffusion
1Surfaces
1Temperature dependence
1Thermal annealing
1Wetting

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