Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « P. Y. Wang »
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P. Y. Tsay < P. Y. Wang < P. Z. Ying  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001F92 (2000-11-06) Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots
002014 (2000-06-01) Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes
002038 (2000-02-01) Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
002039 (2000-02-01) Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes
002164 (1999-10-18) Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells
002173 (1999-08-23) Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature
002195 (1999-03-01) Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well

List of associated KwdEn.i

Nombre de
documents
Descripteur
7Experimental study
7Gallium arsenides
7III-V semiconductors
7Indium compounds
4Capacitance
4DLTS
4Semiconductor quantum wells
3Defect states
3Electron traps
2Carrier density
2Deep energy levels
2Stress relaxation
2TEM
2XRD
1Dislocation interactions
1Dislocation structure
1Hole traps
1Impurity states
1Interface states
1Molecular beam epitaxy
1Photoluminescence
1Schottky barrier diodes
1Semiconductor epitaxial layers
1Semiconductor quantum dots
1Semiconductor superlattices
1p i n diodes
1quantum well devices
1self-assembly

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