IndiumV3, Chine, Analysis, indexItem, Author.i, P. Han

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List of bibliographic references

Number of relevant bibliographic references: 8.

Ident.	Authors (with country if any)	Title
000165 (2013)		Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface
000520 (2012)		Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
000B75 (2010)		Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
001211 (2008)		Circular photogalvanic effect at inter-band excitation in InN
001265 (2007)		The high mobility InN film grown by MOCVD with GaN buffer layer
001501 (2006)		Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
001513 (2006)		Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
001865 (2005)		A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density

List of associated KwdEn.i

Nombre de documents	Descripteur
4	Indium nitride
4	Photoluminescence
3	Gallium nitrides
3	Heterostructures
3	III-V semiconductors
3	Indium nitrides
3	Inorganic compounds
3	Poisson equation
2	Aluminium nitrides
2	Barrier layer
2	Buffer layer
2	Carrier density
2	Electronic properties
2	Energy gap
2	Gallium nitride
2	III-V compound
2	MOCVD
2	Quantum wells
2	Schroedinger equation
2	Self consistency
2	Semiconductor materials
2	Thin films
2	Two-dimensional electron gas
1	Absorption edge
1	Absorption spectra
1	Aluminium
1	Ambient temperature
1	Annealing
1	Anodic oxide
1	Anodizing
1	Atomic force microscopy
1	Band structure
1	Binary compounds
1	Comparative study
1	Compressive stress
1	Computing method
1	Conduction band
1	Coverage rate
1	Critical phenomena
1	Crystal structure
1	Doping profile
1	Electrical characteristic
1	Electrical properties
1	Electron distribution
1	Electron gas model
1	Electron interaction
1	Electronic structure
1	Experimental result
1	Field effect transistor
1	Field effect transistors
1	Fluctuations
1	Gallium Nitrides
1	Gallium compound
1	Hall mobility
1	Helicity
1	Incidence angle
1	Indium Nitrides
1	Indium compound
1	Indium compounds
1	Infrared spectra
1	Interband transitions
1	Interfacial layer
1	Laser radiation
1	Line widths
1	Localized exciton
1	Microscopic model
1	Mirrors
1	Molecular beam epitaxy
1	Multiple quantum well
1	Nanodot
1	Nanostructures
1	Nitrogen compounds
1	Operating conditions
1	Optical absorption
1	Phase separation
1	Phenomenological model
1	Photovoltaic effects
1	Polarization mode
1	Porosity
1	Radiation effects
1	Sapphire
1	Scanning electron microscopy
1	Schrödinger equation
1	Spectral line shift
1	Spin polarized transport
1	Strained layer
1	Temperature dependence
1	Ternary compounds
1	Thickness
1	Two dimensional model
1	VPE
1	Wafers
1	Waveform
1	XRD

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   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    P. Han
}}

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List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

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Index « Auteurs » - entrée « P. Han »