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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Meng-Chyi Wu »
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Melvin Lim < Meng-Chyi Wu < Meng-Kuo Chen  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
001577 (2006) Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes
001963 (2004) Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure
001A56 (2003-12-15) Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AIGaInAs Graded-Composition Layers
001A79 (2003-08-18) Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K
001A91 (2003-06-15) Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes
001C78 (2002-06-15) Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes
001C87 (2002-05) 1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region
002162 (1999-11) Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition
002184 (1999-06-28) Light-induced negative differential resistance in planar InP/InGaAs/InP double-heterojunction p-i-n photodiode
002196 (1999-03) Growth and characterization of high-quality InAs0.86Sb0.05P0.09 alloy by liquid-phase epitaxy
002294 (1998-12) Facet-coating effects on the 1.3-μm strained multiple-quantum-well AlGaInAs/InP laser diodes
002295 (1998-11-15) Raman scattering of InAs1-x-ySbxPy quaternary alloys
002301 (1998-10) Thermal properties of InAs0.86Sb0.05P0.09 homostructure diodes
002321 (1998-06) High-temperature and low-threshold-current operation of 1.5 μm AlGaInAs/InP strain-compensated multiple quantum well laser diodes
002657 (1995-07) Annealing-induced near-surface ordering in disordered Ga0.5In0.5P
002689 (1995-01-15) Liquid-phase epitaxial growth and characterization of InGaAsP layers grown on GaAsP substrates for application to orange light-emitting diodes

List of associated KwdEn.i

Nombre de
documents		Descripteur
15Experimental study
12III-V semiconductors
12Indium compounds
8Gallium arsenides
8Phosphorus compounds
5LPE
5Semiconductor quantum wells
4Indium phosphides
4Photoluminescence
3Aluminium compounds
3Antimony compounds
3Arsenic compounds
3CVD
3MOCVD
3Quantum well lasers
3Semiconductor lasers
2Band structure
2Current density
2Effective mass
2Electrical properties
2Gallium compounds
2Gallium phosphides
2Indium arsenides
2Laser variables measurement
2MOCVD coatings
2Monte Carlo methods
2Quaternary compounds
2Raman spectra
2Semiconductor growth
2XRD
1Annealing
1Arsenic Phosphides
1Binary compounds
1Carrier density
1Carrier mobility
1Compressive stress
1Crystal growth from vapors
1Crystal symmetry
1Diffusion
1Digital simulation
1Doped materials
1Drift mobility
1Drift velocity
1Electric field effects
1Electrical conductivity
1Electroluminescence
1Energy gap
1Epitaxial layers
1Heterostructures
1High field
1High-temperature effects
1IV characteristic
1Infrared spectra
1Inorganic compounds
1Interface structure
1Laser diodes
1Laser noise
1Laser reliability
1Light emitting diodes
1Low pressure
1Multiple quantum well
1Nanostructured materials
1Nanostructures
1Optical losses
1Optical waveguides
1Optimization
1Order-disorder transformations
1Photoconductivity
1Photodiodes
1Piezoelectricity
1Quantum efficiency
1Quantum yield
1Raman spectroscopy
1Semiconductor diodes
1Semiconductor heterojunctions
1Semiconductor materials
1Semiconductor technology
1Semiconductor thin films
1Solid solutions
1Stimulated emission
1Surface properties
1Surface topography
1TEM
1Temperature dependence
1Temperature range 0400-1000 K
1Ternary compounds
1Thickness
1Thin films
1Time resolved spectra
1Transients
1Transport processes
1VPE
1p i n photodiodes

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