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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « M. Y. Kong »
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M. Y. Han < M. Y. Kong < M. Yagi  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
002115 (2000) Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
002122 (2000) Effect of rapid thermal annealing on InGaAs/GaAs quantum wells
002232 (1999) Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures
002235 (1999) Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers : Special issue papers on quantum dots
002379 (1998) New method for the growth of highly uniform quantum dots
002461 (1997-05-05) Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice
002507 (1997) Intersubband absorption from In0.26Ga0.74As/GaAs quantum dot superlattice
002510 (1997) Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices
002526 (1997) Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE
002605 (1996) Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
6Gallium arsenides
6Indium arsenides
6Molecular beam epitaxy
5Binary compounds
5Photoluminescence
4Epitaxial layers
4III-V semiconductors
4Quantum dots
4Semiconductor materials
4Ternary compounds
4Thin films
3Superlattices
3TEM
3XRD
2Binary compound
2Crystal growth
2Crystal growth from vapors
2Diffusion
2Gallium Arsenides
2III-V compound
2Indium Arsenides
2Interdiffusion
2Multilayers
2Photodetectors
2Quantum dot
2Rapid thermal annealing
2Semiconductor quantum dots
2Semiconductor superlattices
2Superlattice
2Ternary compound
2Transmission electron microscopy
1Buffer layer
1Carrier mobility
1Characterization
1Chemical composition
1Cross section
1Deformation
1Dimension spectrum
1Dislocations
1Electric conductivity
1Emission spectroscopy
1Experiments
1Fourier transform infrared spectroscopy
1Hall effect device
1Heterojunctions
1Indium compounds
1Infrared absorption
1Infrared detector
1Infrared detectors
1Infrared radiation
1Infrared spectrometers
1Integrated circuit
1Lattice relaxation
1Light absorption
1Light polarization
1Low temperature
1Microelectronic fabrication
1Misfit dislocations
1Normal incident infrared absorption
1Optical properties
1Optical waveguides
1Photodetector
1Photoluminescence spectrum
1Quantum dot superlattice
1RHEED
1Reflection high energy electron diffraction
1Relaxation
1Self assembly
1Self organization
1Semiconducting films
1Semiconducting gallium arsenide
1Semiconducting indium compounds
1Semiconductor epitaxial layers
1Semiconductor growth
1Solid solutions
1Spatial distribution
1Strained quantum well
1Stresses
1Subband
1Temperature dependence
1Vertical distribution
1X ray diffraction

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