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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « M. Qi »
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M. Q. Weng < M. Qi < M. R. Ji  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
001210 (2008) Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz
001B30 (2003) The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors
001B95 (2003) High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
001C25 (2003) Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs
001D60 (2002) Interband impact ionization in THz-driven InAs/AlSb heterostructures
001F09 (2001) Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers
001F66 (2001) Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
002378 (1998) Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy
002588 (1996) The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE
002599 (1996) Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE
002707 (1995) Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 μm

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
6Gallium arsenides
6Indium arsenides
5Binary compounds
5Indium phosphides
5Ternary compounds
4Binary compound
4GSMBE method
4Molecular beam epitaxy
4Photoluminescence
4Semiconductor materials
3Crystal growth from vapors
3Gallium phosphides
3Output power
3Quaternary compounds
2Carrier mobility
2GSMBE
2Indium phosphide
2Infrared laser
2Laser diodes
2Mismatch lattice
2Performance evaluation
2Quaternary compound
2Semiconductor lasers
2Thin films
2XRD
1Activation energy
1Aluminium antimonides
1Aluminium arsenides
1Bipolar transistors
1Breakdown voltage
1Carrier density
1Characterization
1Charge carrier generation
1Common base
1Damaging
1Dark current
1Direct current
1Double heterojunction
1Electrical characteristic
1Electrical properties
1Electron hole pair
1Electron temperature
1Electron-phonon interactions
1Energy-level transitions
1Enhancement mode
1Epitaxial layers
1Frequency response
1Gain
1Gallium Antimonides
1Gallium Arsenides phosphides
1Gallium antimonides
1Gallium phosphide
1Hall effect
1Hall mobility
1Heterojunction bipolar transistors
1Heterojunction transistor
1Heterojunctions
1Heterostructures
1High electron mobility transistor
1High strength current
1III-V compound
1IV characteristic
1Impact ionization
1Indium Arsenides
1Indium Arsenides phosphides
1Indium additions
1Indium antimonides
1Infrared detector
1Line widths
1Low noise amplifier
1Memory effect
1Microelectronic fabrication
1Microwave
1Millimetric wave
1Mixing ratio
1Modulation
1Modulation doping
1Molecular beam condensation
1Morphology
1Multilayers
1Multiple quantum well
1Noise figure
1Operating mode
1Optimization
1Oscillation frequency
1P type conductivity
1Passivation
1Photodetector
1Photodetectors
1Photodiodes
1Planarization
1Power amplifier
1Power electronics
1Production process
1Pseudomorphic growth
1Pseudomorphic transistor
1Quantum well lasers
1Strained layer
1Strained quantum well

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