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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « M. H. Xie »
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M. H. Wu < M. H. Xie < M. H. Ya  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000360 (2012) Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials
000454 (2012) Ordered versus random nucleation of InN islands grown by molecular beam epitaxy
001299 (2007) Structural properties of oxygen on InN(0001) surface
001800 (2005) In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
001A11 (2004) First-principles study of indium on silicon (1 0 0): the structure, defects and interdiffusion
001A54 (2003-12-22) InN island shape and its dependence on growth condition of molecular-beam epitaxy
001A66 (2003-10-15) Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
001B86 (2003) Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
001E28 (2001-09-17) Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
001F97 (2000-10-02) X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
5III-V semiconductors
4Indium compounds
4Island structure
3Indium nitrides
3Inorganic compounds
3Molecular beam epitaxy
3Photoluminescence
3Semiconductor epitaxial layers
3Semiconductor materials
3Surface structure
2Gallium compounds
2Indium nitride
2Nucleation
2Scanning tunneling microscopy
2Wetting
2Wide band gap semiconductors
1Ab initio calculations
1Annealing
1Atomic structure
1Binary compounds
1Blende structure
1Carrier density
1Chemical interdiffusion
1Crystal structure
1Defect structure
1Dislocation core
1Dislocation structure
1Electron diffraction
1Excitation spectrum
1Excitons
1Film growth
1Free carrier
1Gallium arsenides
1Gallium nitride
1Gallium nitrides
1Growth mechanism
1Indium
1Interdiffusion
1Internal field
1Local density approximation
1Localized states
1MOCVD coatings
1Misfit dislocations
1Multiple quantum well
1Nanostructured materials
1Nanowires
1Optimization
1Oxygen
1Partial dislocation
1Pressure effects
1Pseudopotential methods
1Roughness
1Screening
1Semiconductor growth
1Semiconductor quantum dots
1Semiconductor superlattices
1Silicon
1Spectral shift
1Stranski Krastanow growth
1Surface defect
1Surface diffusion
1Surface reconstruction
1Surface topography
1Ternary compounds
1Total energy
1Transmission electron microscopy
1Vacancies
1XRD
1self-assembly

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EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "M. H. Xie" \
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