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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « LINGJUAN ZHAO »
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LINGJIANG KONG < LINGJUAN ZHAO < LINGJUN HUO  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000F65 (2009) A ridge width varied two-section index-coupled DFB self-pulsation laser with a wide continuously tunable frequency range
001238 (2008) A novel butt-joint scheme for the preparation of electro-absorptive lasers
001456 (2007) Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser
001478 (2007) Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser
001693 (2006) A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD
001848 (2005) Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE
001987 (2004) MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Distributed feedback lasers
4Laser diodes
4MOVPE method
4Multiple quantum well
4Quaternary compounds
4Semiconductor lasers
4VPE
3Experimental study
3Gallium Arsenides
3Gallium Phosphides
3Gallium arsenides
3Indium Arsenides
3Indium Phosphides
3Indium arsenides
3Indium phosphides
3Polyimides
3Threshold current
2Binary compounds
2Digital simulation
2III-V semiconductors
2Integrated optics
2Optical waveguides
2Selective growth
1Active layer
1Aluminium arsenides
1Auger recombination
1Beam profiles
1CVD
1Capacitance
1Crystal growth from vapors
1Electroabsorption modulators
1Energy gap
1Experimental result
1Fabrication property relation
1Frequency locking
1Gallium phosphides
1Growth mechanism
1MOCVD
1Manufacturing processes
1Optimization
1Optimization method
1Photoluminescence
1Quantum well devices
1Quantum yield
1Ridge waveguides
1Selective area
1Self-pulsing
1Semiconductor materials
1Spot size
1Strains
1Stress effects
1Surface morphology
1Ternary compounds
1Thickness
1Tunnel effect
1XRD

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