Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « LINFENG LAN »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
LINBAO LUO < LINFENG LAN < LING CHANG  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000015 (2014) Performance improvement of oxide thin-film transistors with a two-step-annealing method
000109 (2013) Solution-processed efficient CdTe nanocrystal/CBD-CdS hetero-junction solar cells with ZnO interlayer
000476 (2012) Low-Voltage High-Stability Indium-Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum
000512 (2012) High Efficiency and High Voc Inverted Polymer Solar Cells Based on a Low-Lying HOMO Polycarbazole Donor and a Hydrophilic Polycarbazole Interlayer on ITO Cathode
000834 (2011) High-Performance Indium-Gallium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide
000848 (2011) Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

List of associated KwdEn.i

Nombre de
documents
Descripteur
4Thin film transistor
3Indium oxide
3Zinc oxide
2Alumina
2Aluminium oxide
2Annealing
2Anodic oxide
2Electron mobility
2Energy conversion
2Illumination
2Interlayers
2Leakage current
2Oxide layer
2Volatile organic compound
2Voltage threshold
1Active layer
1Aluminium
1Annealing temperature
1Anodizing
1Capacitance
1Carbazole
1Cathode
1Charge carrier trapping
1Chemical bath deposition
1Conjugated polymer
1Contact resistance
1Crystal growth from solutions
1Damaging
1Density of states
1Donor center
1Doped materials
1Electric stress
1Electron state
1Electronic properties
1Electronic structure
1Energy gap
1Frontier orbital
1Gallium oxide
1Gallium tellurides
1Growth mechanism
1High field
1High k dielectric
1High performance
1Hole mobility
1II-VI semiconductors
1Indium Zinc Oxides Mixed
1Interfacial layer
1Low voltage
1Nanocrystal
1Nanostructured materials
1Neodymium addition
1Performance evaluation
1Photovoltaic cell
1Semiconductor materials
1Silicon oxides
1Solar cell
1Solar cells
1Stability
1Step method
1Subband
1Tandem solar cell
1Thermal annealing
1Thermal stress
1Thiadiazole derivatives
1Thin film
1Thin films
1Transistor gate
1p n junctions

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "LINFENG LAN" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "LINFENG LAN" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    LINFENG LAN
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024