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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « L. Zhang »
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L. Zetta < L. Zhang < L. Zhao  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000348 (2013) 13.6%-efficient Cu(In,Ga)Se2 solar cell with absorber fabricated by RF sputtering of (In,Ga)2Se3 and CuSe targets
000749 (2011) Photoelectron Characteristics of HgInTe Detector
000B37 (2010) High-performance ZnO thin film transistors with sputtering SiO2/Ta2O5/SiO2 multilayer gate dielectric
001007 (2008) Temperature-dependent characteristics of Pt Schottky contacts on n-type HgInTe
001008 (2008) Temperature dependence of the energy bandgap of HgInTe
001546 (2006) Structural properties of CuInSe2 films prepared by selenization of metallic precursors on MoNx film substrates
001608 (2006) Indium oxide nanostructures : Semiconductor nanowires
001B89 (2003) InGaN/GaN MQW high brightness LED grown by MOCVD
001C04 (2003) Formation of CuInSe2 and Cu(In, Ga)Se2 films by electrodeposition and vacuum annealing treatment
001F67 (2001) Catalytic growth of semiconducting In2O3 nanofibers
002258 (1999) Nonlinear optical absorption of InAs nanocrystals embedded in SiO2 thin films
002402 (1998) Growth of InAs nanocrystals embedded in SiO2 films by radio-frequency magnetron cosputtering

List of associated KwdEn.i

Nombre de
documents		Descripteur
3Copper selenides
3Experimental study
3Indium selenides
3Nanocrystal
3Semiconductor materials
3Silicon oxides
2Absorption coefficients
2Absorption spectra
2Cathode sputtering
2Gallium selenides
2Heat treatment
2Indium arsenides
2Indium oxide
2Magnetrons
2Microstructure
2Morphology
2Nanostructures
2Photoluminescence
2Radiofrequency sputtering
2Scanning electron microscopy
2Solar cell
2Sputtering
2Transmission electron microscopy
1Absorbent material
1Annealing
1Barrier height
1Bilayers
1Binary compound
1Binary compounds
1Blue green light emission
1CVD
1Capacitance
1Capacitor
1Catalytic growth
1Cathodoluminescence
1Composite materials
1Composition effect
1Conversion rate
1Crystal growth
1Crystal growth from vapors
1Crystal structure
1Crystallinity
1Doping
1Electrical characteristic
1Electrodeposition
1Energy dispersive spectroscopy
1Experiments
1Fabrication property relation
1Film growth
1Gallium nitride
1Gallium tellurides
1Gates
1Gaussian beam
1Gold
1Gold nanoclusters
1Growth mechanism
1High resolution transmission electron microscopy
1Hot wall growth
1IV characteristic
1Imagery
1In situ
1Indium Mercury Tellurides Mixed
1Indium alloys
1Indium nitride
1Indium oxides
1Infrared detectors
1Inorganic compounds
1Interface
1Light emitting diode
1MOCVD
1Manufacturing process
1Mercury alloys
1Microelectronic fabrication
1Monocrystals
1Multilayer
1Multiple layer
1Multiple quantum well
1Nanofibers
1Nanostructured materials
1Nanowires
1Non linear effect
1Optical absorption
1Optoelectronic device
1Optoelectronic devices
1Particle size
1Performance evaluation
1Photodetectors
1Photodiodes
1Photovoltaic cell
1Plasma
1Polycrystal
1Preferred orientation
1Quantum dot
1Quaternary compound
1Radiation detectors
1Reaction mechanism
1Rectification
1Rectifying contact
1Sandwich structure
1Scanning transmission electron microscopy

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