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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « L. Wang »
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L. Wan < L. Wang < L. Wei  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000911 (2011) Effect of Ce-Doping on Thermoelectric Properties in PbTe Alloys Prepared by Spark Plasma Sintering
000A38 (2010) Structural and electronic properties of amorphous InSb from first principles study
000C75 (2009) Thermoelectric properties of indium-filled skutterudites prepared by combining solvothermal synthesis and melting
001495 (2007) 1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
001961 (2004) Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers
001A05 (2004) High-power vertical cavity surface emitting laser with good performances
002117 (2000) Effects of distance between wells on band structure and characteristics of InGaAs/InGaAsP strain-compensated multiple quantum well lasers
002326 (1998-04-27) Formation of PIn defect in annealed liquid-encapsulated Czochralski InP
002350 (1998) The study of single mode 650nm AlGaInP quantum well laser diodes for DVD
002376 (1998) Operating characteristics of InGaAsP/GaAs SCH SQW high power lasers by LPE
002381 (1998) Microcavity effect and InGaAs/InGaAsP MQW microdisk laser
002386 (1998) Linewidth in microdisk laser
002388 (1998) Investigation of 980nm GaInAs/GaAs/GaInP QW high power lasers
002398 (1998) High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD
002400 (1998) High performance 1.55μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
002433 (1998) 808nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Semiconductor lasers
8Quaternary compounds
7Indium Phosphides
6Gallium Arsenides
5Binary compounds
5Quantum wells
4Gallium Phosphides
4MOVPE method
3High power
3Injection laser
3Multiple quantum well
3Quantum well lasers
3SCH lasers
3Ternary compounds
3Theory
2Aluminium Phosphides
2Electrical conductivity
2Epitaxy
2Experimental study
2Experiments
2Indium Arsenides
2Light emission
2Low pressure
2Seebeck effect
2Thermal conductivity
2Thermoelectric power
2XRD
1Aluminium arsenides
1Amorphous semiconductors
1Annealing
1Antireflection coatings
1Ball mill
1Band structure
1Carrier concentration
1Cerium additions
1Cerium alloys
1Charge compensation
1Cobalt antimonides
1Contact stripe
1Coordination number
1Crystal growth from melts
1Crystal structure
1Current density
1Deep energy levels
1Defect absorption spectra
1Defect states
1Density functional method
1Distributed feedback lasers
1Divergence angles
1Doping
1Electric conductivity
1Electric contacts
1Electric current distribution
1Electric resistivity
1Electronic density of states
1Electronic properties
1Electronic structure
1Far field
1Feedback
1Figure of merit
1Filled skutterudites
1Fourier transform spectra
1Gain control
1Gain-coupled lasers
1Gallium arsenides
1Gallium phosphides
1Glass structure
1Hall effect
1High power lasers
1High reflection coated devices
1III-V semiconductors
1Impurity absorption spectra
1Impurity states
1Impurity-defect interactions
1Indium
1Indium additions
1Indium antimonides
1Indium arsenides
1Indium compounds
1Indium gallium arsenide
1Indium phosphides
1Induction furnaces
1Infrared spectra
1Lattice parameters
1Lead tellurides
1Linear phase
1Liquid phase
1Melting
1Mirrors
1Mode behavior
1Molecular beam epitaxy
1Multi-well energy representation method
1N type conductivity
1NaCl structure
1Output power
1Pair correlation function
1Performance characteristic
1Potassium alloys
1Pumping (laser)
1Reliability

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