Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « L. W. Guo »
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L. W. Chen < L. W. Guo < L. W. Ji  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001214 (2008) Characterization of a-plane InN film grown on r-plane sapphire by MOCVD
001300 (2007) Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition
001345 (2007) Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching
001595 (2006) Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy
001609 (2006) InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
001831 (2005) Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy
001976 (2004) Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source
001A23 (2004) Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas

List of associated KwdEn.i

Nombre de
documents
Descripteur
6III-V semiconductors
5Atomic force microscopy
5Photoluminescence
5XRD
4Molecular beam epitaxy
4Roughness
3Buffer layer
3Experimental study
3Gallium arsenides
3Optical properties
3Thin films
2Aluminium arsenides
2Binary compounds
2Crystal growth from vapors
2Energy gap
2Gallium nitrides
2Indium nitrides
2MOCVD
2Orientation relation
2Rocking curve
2Semiconductor materials
2Temperature dependence
2Ternary compounds
2Thick films
1Absorption spectra
1Adatoms
1Aluminium oxides
1Carrier density
1Carrier mobility
1Chemical etching
1Crystal structure
1Decomposition
1Dislocations
1Doping
1Electrical properties
1Electroluminescence
1Electron mobility
1Electronic properties
1Epitaxial film
1Epitaxial layers
1Gallium nitride
1Gallium phosphide
1Gallium phosphides
1Growth mechanism
1Hall effect
1Hall mobility
1Heterojunction bipolar transistors
1III-V compound
1Indium antimonides
1Indium arsenides
1Indium nitride
1Indium phosphide
1Indium phosphides
1Line width
1Line widths
1Metamorphism
1Mismatch lattice
1Multiple quantum well
1Phonons
1Planar doping
1Quantum wells
1RHEED
1Raman scattering
1Raman spectra
1SAED
1Size effect
1Surface diffusion
1Surface morphology
1Template reaction
1Thickness
1Transmission electron microscopy
1Two-dimensional electron gas
1Vapor deposition
1Wet process
1Wurtzite structure
1X ray diffraction

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