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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « L. Li »
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L. L. Yang < L. Li < L. Lin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000489 (2012) Influence of substrates on the structural and optical properties of ammonia-free chemically deposited CdS films
000581 (2012) Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
000784 (2011) Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation
001020 (2008) Surface modification and characterization of indium-tin oxide for organic light-emitting devices
001265 (2007) The high mobility InN film grown by MOCVD with GaN buffer layer
001503 (2006) Transport properties of InSb nanowire arrays
002262 (1999) Liquid phase epitaxial growth of AlGaInPAs on GaAs substrates
002385 (1998) Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-z/GaAs with direct band gap up to 2.0 eV
002493 (1997) Solid-liquid equilibria for III-V quinary alloy semiconductors

List of associated KwdEn.i

Nombre de
documents		Descripteur
5XRD
4Photoluminescence
3Atomic force microscopy
3MOCVD
3Semiconductor materials
2Electrical characteristic
2Experimental study
2Inorganic compounds
2LPE
2Microstructure
2Multi-element compounds
2Roughness
2Scanning electron microscopy
2Thin films
1Absorption coefficients
1Absorption spectra
1Activation energy
1Aluminium Alloys
1Aluminium Arsenides phosphides
1Aluminium arsenides
1Aluminium phosphides
1Ambient temperature
1Annealing
1Anode
1Arsenic Alloys
1Band structure
1Blueshift
1Buffer layer
1Cadmium sulfide
1Carrier density
1Charge carrier density
1Chemical bath deposition
1Contact angle
1Contact surface
1Crystal growth
1Crystal structure
1Diffuse reflection
1Doped materials
1Electrical properties
1Electrodeposition
1Electroluminescence
1Electronic properties
1Electronic structure
1Energy gap
1Epitaxial layers
1Exciton
1Fabrication property relation
1Four point probe
1Free carrier
1Gallium Alloys
1Gallium Arsenides phosphides
1Gallium Indium Nitrides Mixed
1Gallium nitrides
1Gallium phosphides
1Hall effect
1Hall mobility
1Heteroepitaxy
1High temperature
1III-V compound
1III-V semiconductors
1IV characteristic
1Indium Alloys
1Indium Arsenides phosphides
1Indium antimonides
1Indium arsenides
1Indium compounds
1Indium nitride
1Indium nitrides
1Indium oxide
1Indium phosphides
1Infrared spectra
1Injection current
1Light emission
1Light emitting device
1Light emitting diode
1Liquid solid equilibrium
1Microelectronic fabrication
1Mirrors
1Mismatch lattice
1Morphological analysis
1Multi-element alloys
1Multiple quantum well
1Nanowires
1Non linear effect
1Nucleation
1Operating conditions
1Optical absorption
1Optoelectronic device
1Organic electronics
1Organic light emitting diodes
1Oxygen
1Phase equilibrium
1Phosphorus Alloys
1Plasma assisted processing
1Properties of materials
1Quinary system
1Raman scattering
1Raman spectra
1Redshift
1Reliability

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