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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « L. Chen »
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L. Cao < L. Chen < L. Cheng  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000C28 (2010) Analysis on the high luminous flux white light from GaN-based laser diode
000C60 (2009) White Light Emission from Ultraviolet Laser Diode
000C61 (2009) White Light Emission from Fiber Pigtailed Laser Module
002087 (2000) Native oxided AlAs current blocking layer for AlGaInP high brightness light emitting diodes
002350 (1998) The study of single mode 650nm AlGaInP quantum well laser diodes for DVD
002398 (1998) High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD
002399 (1998) High power 980 nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion
002400 (1998) High performance 1.55μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
002405 (1998) Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
002417 (1998) Determination of trace indium in geochemical samples using electrothermal atomization/laser-excited atomic fluorescence spectrometry after a solvent extraction
002421 (1998) Carbon doped 980nm InGaAs strained quantum well lasers grown by metalorganic chemical-vapor deposition
002573 (1996-03-04) Transient photovoltaic properties in Al/tin-phthalocyanine/indium-tin-oxide sandwich cell

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Semiconductor lasers
6Ternary compounds
5MOVPE method
4Binary compounds
4Gallium Arsenides
4Indium Phosphides
4Injection current
4Quaternary compounds
4Strained quantum well
3Gallium Nitrides
3Gallium Phosphides
3Indium Arsenides
3Indium Nitrides
3Injection laser
3Laser diodes
3Phosphors
3White light
2Aluminium Arsenides
2Aluminium Phosphides
2Experimental study
2Quantum wells
2Radiation sources
1Aging test
1Aluminium
1Aluminium arsenides
1Aluminium phosphide
1Atomic fluorescence spectrometry
1Blocking layer
1Blue laser
1Blue light
1Brightness
1CVD
1Carbon
1Chemical analysis
1Chemical enrichment
1Doping
1Electrical properties
1Electroluminescent device
1Emission spectra
1Experimental result
1Gallium phosphide
1High power
1III-V semiconductors
1Indium
1Indium compounds
1Indium phosphide
1Interfacial layer
1Light emitting diode
1Low pressure
1Luminous intensity
1Matrix effect
1Measurement method
1Multilayers
1Operating conditions
1Optical coupling
1Optical fibers
1Optical properties
1Optimization
1Oxide layer
1Performance characteristic
1Performance evaluation
1Photo-induced transient spectroscopy
1Photovoltaic effect
1Phthalocyanines
1Preconcentration
1Quaternary compound
1Reliability
1Rocks
1Room temperature
1Sandwich structure
1Single mode laser
1Solvent extraction
1Spectral response
1Strained layer
1Thermoelectric atomization
1Tin oxides
1Trace analysis
1Ultraviolet laser
1Visible radiation
1Waveform

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