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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Kuo-Hui Yu »
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Kunsheng Hu < Kuo-Hui Yu < Kuo-Shung Liu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
001C83 (2002-05) Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors
001E41 (2001-08-13) Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications
001E74 (2001-01-15) Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor
001F13 (2001) Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
001F94 (2000-11) Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors
002031 (2000-03) Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
002177 (1999-07-26) Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
002181 (1999-07-05) Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor
002193 (1999-04-05) Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Gallium arsenides
8Experimental study
8Indium compounds
7III-V semiconductors
5Gallium compounds
3Heterojunction bipolar transistors
3Leakage currents
2Aluminium compounds
2Tunnel effect
2semiconductor device breakdown
1Aluminium arsenides
1Binary compound
1Conduction bands
1Doping profiles
1Electric breakdown
1Electrical properties
1Field effect transistors
1High electron mobility transistors
1High-temperature effects
1Illumination
1Indium arsenides
1Indium phosphide
1Insulated gate field effect transistors
1Interface states
1Junction gate field effect transistors
1Microwave field effect transistors
1Microwave power transistors
1Minority carriers
1Negative differential conductivity
1Phosphorus compounds
1Planar doping
1Power field effect transistors
1Quaternary compound
1Resonant tunneling transistors
1Schottky barriers
1Semiconductor device breakdown
1Semiconductor heterojunctions
1Semiconductor superlattices
1Voltage current curve
1high-temperature electronics

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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