Auteurs
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Kun-Wei Lin »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Kun-Long Hsieh < Kun-Wei Lin < Kung-Hsuan Lin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
001A63 (2003-11) Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes
001C83 (2002-05) Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors
001E41 (2001-08-13) Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications
001E74 (2001-01-15) Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor
001F13 (2001) Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
001F94 (2000-11) Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
5Gallium arsenides
5Indium compounds
4Gallium compounds
4III-V semiconductors
3Leakage currents
2Tunnel effect
1Aluminium arsenides
1Binary compound
1Electric breakdown
1Electrical properties
1Field effect transistors
1Gas sensors
1Heat of adsorption
1Heterojunction bipolar transistors
1High electron mobility transistors
1High-temperature effects
1Hydrogen
1Illumination
1Indium arsenides
1Indium phosphide
1Junction gate field effect transistors
1Microwave field effect transistors
1Microwave power transistors
1Negative differential conductivity
1Palladium
1Phosphorus compounds
1Planar doping
1Platinum
1Power field effect transistors
1Quaternary compound
1Schottky barrier diodes
1Semiconductor device breakdown
1Voltage current curve
1high-temperature electronics
1semiconductor device breakdown

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "Kun-Wei Lin" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "Kun-Wei Lin" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    Kun-Wei Lin
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024