IndiumV3, Chine, Analysis, indexItem, Author.i, Jung-Hui Tsai

Jung-Chuan Chou < Jung-Hui Tsai < Jung-Ting Chang

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.

Ident.	Authors (with country if any)	Title
001A71 (2003-09-29)		Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature
001B97 (2003)		High performances of InP/InGaAs heterojunction bipolar transistors with a δ-doped sheet between two spacer layers
001E74 (2001-01-15)		Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor
002163 (1999-10-25)		Application of an AlGaAs/GaAs/InGaAs heterostructure emitter for a resonant-tunneling transistor
002182 (1999-07)		Superlatticed negative differential-resistance heterojunction bipolar transistor
002649 (1995-07-17)		Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure
002673 (1995-03-20)		Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure
002674 (1995-03-15)		Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch

List of associated KwdEn.i

Nombre de documents	Descripteur
8	Gallium arsenides
6	Experimental study
4	Heterojunction bipolar transistors
4	Indium arsenides
4	Indium compounds
3	Field effect transistors
3	III-V semiconductors
2	Aluminium compounds
2	Doped materials
2	IV characteristic
2	Negative resistance
2	Quantum wells
2	Resonant tunneling transistors
2	Semiconductor superlattices
1	Barrier layer
1	Base emitter junction
1	Binary compound
1	Collector
1	Current density
1	Current gain
1	Electric breakdown
1	Electrical properties
1	Fabrication
1	Heterostructures
1	High-temperature effects
1	Indium phosphide
1	Instrumentation
1	Leakage currents
1	MIS junctions
1	MOCVD
1	Minority carriers
1	Negative resistance devices
1	Offset voltage
1	Performance
1	Performance evaluation
1	Phosphorus compounds
1	Planar doping
1	Resonance
1	Room temperature
1	Semiconductor device measurement
1	Semiconductor growth
1	Semiconductor switches
1	Spike potential
1	Surface recombination
1	Temperature effects
1	Ternary alloys
1	Ternary compound
1	Trapping
1	Tunnel effect
1	Tunnel transistors
1	VPE
1	low-power electronics
1	semiconductor device measurement

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "Jung-Hui Tsai"

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "Jung-Hui Tsai" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    Jung-Hui Tsai
}}

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Serveur d'exploration sur l'Indium - Analysis (Chine)Index « Auteurs » - entrée « Jung-Hui Tsai »

List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Jung-Hui Tsai »