Auteurs
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Jing-Yuh Chen »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Jing-Yi Wang < Jing-Yuh Chen < Jing-Yun Gao  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
001A39 (2004) Characteristics of an InP-InGaAs-InGaAsP HBT
001B18 (2003-01) Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures
002031 (2000-03) Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
002177 (1999-07-26) Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
002181 (1999-07-05) Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor
002192 (1999-04-12) Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
6Gallium arsenides
5III-V semiconductors
5Indium compounds
3Heterojunction bipolar transistors
2Aluminium compounds
2Gallium compounds
2semiconductor device breakdown
1Arsenic compound
1Bipolar transistors
1Blocking
1Breakdown point
1Capacitance
1Composite material
1Conduction bands
1Current density
1Current gain
1Direct current
1Doping profiles
1Electrical characteristic
1Electrons
1Experimental result
1Gallium compound
1High electron mobility transistors
1Indium arsenides
1Indium compound
1Interface states
1Minority carriers
1Performance evaluation
1Phosphorus compound
1Resonant tunneling transistors
1Semiconductor device breakdown
1Semiconductor device measurement
1Semiconductor superlattices
1Spike potential
1Ternary compound
1Transistor collector
1Tunnel effect
1Voltage current curve
1Waveform
1Wide band gap semiconductors

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "Jing-Yuh Chen" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "Jing-Yuh Chen" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    Jing-Yuh Chen
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024