Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « JU WU »
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JU HYUN MYUNG < JU WU < JUAN DING  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001734 (2005) Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)
001F02 (2001) Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001)
002053 (2000) The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate
002055 (2000) The effect of substrate orientation on the morphology of InAs nanostructures on (0 0 1) and (1 1 n)A/B (n = 1-5) InP substrates
002238 (1999) Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transition
002407 (1998) Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity
002413 (1998) Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE
002974 (1987) A stress-strain model for EL2 on the basis of chemical principles and its applications. II: Applications and discussion

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Experimental study
6Indium arsenides
6Molecular beam epitaxy
4Heteroepitaxy
4Semiconductor materials
3Binary compounds
3Crystal growth from vapors
3III-V semiconductors
3Photoluminescence
2Atomic force microscopy
2Gallium Arsenides
2Gallium arsenides
2Morphology
2Quantum dots
2Self organization
2Stresses
2Surfaces
2TEM
1Aluminium Arsenides
1Anisotropy
1Antisite defect
1Binary compound
1Characterization
1Chemical composition
1Composition effect
1Conductivity
1Crystal defect
1Crystal orientation
1Dislocation
1Dislocation motion
1Electron gas
1Epitaxial layers
1Faceting
1Fluctuations
1Growth mechanism
1Hall mobility
1Heterojunctions
1High electron mobility transistor
1High-resolution methods
1III-V compound
1Impurity
1Indium
1Indium Arsenides
1Indium Phosphides
1Indium phosphides
1Inorganic compound
1Inorganic compounds
1Interference
1Island structure
1Lattice image
1Microelectronic fabrication
1Mismatch lattice
1Molecular beam condensation
1Multilayers
1Nanostructures
1Optical properties
1Quantization
1Quantum wires
1RHEED
1Self assembly
1Self-assembled layers
1Size effect
1Solid solutions
1Stacking sequence
1Strain distribution
1Stress strain relation
1Substrates
1Temperature effects
1Ternary compound
1Ternary compounds
1Thermal annealing
1Thin films
1Three-dimensional systems
1Transistor channel
1Transmission electron microscopy
1Two-dimensional systems
1Vacancy
1XRD

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