IndiumV3, Chine, Analysis, indexItem, Author.i, J. X. Chen

J. Wu < J. X. Chen < J. X. Dong

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.

Ident.	Authors (with country if any)	Title
001B95 (2003)		High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
001F09 (2001)		Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers
001F44 (2001)		Gsmbe growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT
001F66 (2001)		Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
002027 (2000-03-15)		Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures
002103 (2000)		Growth and characterization of high-quality GaInAs/AlInAs triple wells
002272 (1999)		GSMBE grown infrared quantum cascade laser structures
002333 (1998-03-23)		Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy
002378 (1998)		Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy
002548 (1996-11-01)		Photoluminescence studies of InGaAs/InAlAs strained double quantum wells
002552 (1996-10-15)		Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy
002588 (1996)		The effect of III-V ratio at the substrate surface on the quality of InP grown by GSMBE
002599 (1996)		Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE
002613 (1996)		Improved performance of InAlAs-InGaAs-InP MSM photodetectors with graded superlattice structure grown by gas source MBE

List of associated KwdEn.i

Nombre de documents	Descripteur
11	Experimental study
9	Gallium arsenides
7	GSMBE method
7	Indium arsenides
6	Molecular beam epitaxy
6	Ternary compounds
5	Indium phosphides
4	Binary compounds
4	Crystal growth from vapors
4	Photoluminescence
4	Semiconductor materials
3	Aluminium arsenides
3	Gallium phosphides
3	Infrared laser
3	Semiconductor lasers
3	Thin films
2	Characterization
2	Epitaxial layers
2	GSMBE
2	Gallium phosphide
2	Heterojunctions
2	High electron mobility transistor
2	III-V semiconductors
2	Indium compounds
2	Indium phosphide
2	Laser diodes
2	Microelectronic fabrication
2	Mismatch lattice
2	Modulation doping
2	Output power
2	Performance evaluation
2	Pseudomorphic transistor
2	Quantum well lasers
2	Quaternary compounds
2	Ternary compound
2	XRD
1	Abrupt heterojunction
1	Aluminium compounds
1	Application
1	Binary compound
1	Bipolar transistors
1	Bragg reflection
1	Carrier concentration
1	Carrier density
1	Carrier mobility
1	Current density
1	Dark current density
1	Double heterojunction
1	Electric breakdown
1	Electrical properties
1	Electron-phonon interactions
1	Enhancement mode
1	Epitaxial growth
1	Experiments
1	Gain
1	Gas source molecular beam epitaxy
1	Graded superlattice
1	Ground states
1	Hall effect
1	Hall mobility
1	Heterojunction transistor
1	High hole mobility transistor
1	IV characteristic
1	Impurity states
1	Indium additions
1	Interface states
1	Light absorption
1	Low noise amplifier
1	Magnetic field effects
1	Memory effect
1	Metal semiconductor metal photodetectors
1	Metastable states
1	Mixing ratio
1	Modulation
1	Morphology
1	Multilayers
1	Multimode laser
1	Multiple quantum well
1	Noise figure
1	Operating mode
1	Optical microscopy
1	Optimization
1	P type conductivity
1	Phonon-phonon interactions
1	Photodetectors
1	Photoelectromagnetic effects
1	Polarons
1	Pseudomorphic growth
1	Quantum cascade lasers
1	RHEED
1	Semiconducting indium compounds
1	Semiconducting indium phosphide
1	Semiconductor device structures
1	Semiconductor epitaxial layers
1	Semiconductor heterojunctions
1	Semiconductor superlattices
1	Silicon
1	Strained quantum well
1	Substrate growth temperature
1	Substrates

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List of bibliographic references

List of associated KwdEn.i

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Index « Auteurs » - entrée « J. X. Chen »