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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « J. S. Wang »
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J. S. Tsang < J. S. Wang < J. S. Wu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
001881 (2004-06) Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
001C81 (2002-05-13) Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP
001F92 (2000-11-06) Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots
001F95 (2000-10-15) Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well
002014 (2000-06-01) Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes
002038 (2000-02-01) Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence
002039 (2000-02-01) Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes
002164 (1999-10-18) Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells
002173 (1999-08-23) Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature
002195 (1999-03-01) Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well
002445 (1997-10-15) Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy
002663 (1995-05-22) Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor
002679 (1995-03) Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Experimental study
12Gallium arsenides
11Indium compounds
10III-V semiconductors
7Semiconductor quantum wells
4Capacitance
4DLTS
3Defect states
3Electron traps
3Photoluminescence
2CVD
2Carrier density
2Deep energy levels
2Doped materials
2Indium arsenides
2Interface states
2Quantum wells
2Semiconductor epitaxial layers
2Stress relaxation
2TEM
2XRD
1Annealing
1Arsenic compounds
1Carrier mobility
1Chemical interdiffusion
1Current density
1Dislocation interactions
1Dislocation structure
1Doping profiles
1Electrical properties
1Electroluminescent devices
1Electroreflectance
1Fermi level
1Field effect transistors
1Heterostructures
1Hole traps
1Hydrogenation
1IV characteristic
1Impurity states
1Iron
1Junction transistors
1Localized states
1Molecular beam epitaxy
1Nitrogen compounds
1Passivation
1Photoconductivity
1Photoreflectance
1Red shift
1Schottky barrier diodes
1Semiconductor junctions
1Semiconductor lasers
1Semiconductor quantum dots
1Semiconductor superlattices
1Silicon additions
1Ternary compounds
1Tin
1p i n diodes
1quantum well devices
1self-assembly

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