Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « J. Q. Pan »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
J. Q. Ning < J. Q. Pan < J. Q. Wang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000812 (2011) InP-based deep-ridge NPN transistor laser
000F52 (2009) Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates
001400 (2007) Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE
001495 (2007) 1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
001588 (2006) Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
001589 (2006) Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers
001591 (2006) Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission
001614 (2006) High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD
001615 (2006) High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD
001621 (2006) Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
001845 (2005) Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD

List of associated KwdEn.i

Nombre de
documents
Descripteur
10Indium arsenides
9Gallium arsenides
7III-V semiconductors
6Experimental study
6Photoluminescence
5MOCVD
5Multiple quantum well
5Quaternary compounds
5Semiconductor lasers
4Aluminium arsenides
4Binary compounds
4Gallium phosphides
4Indium phosphides
3Inorganic compounds
3Quantum dots
2CVD
2Distributed feedback lasers
2Low pressure
2MOVPE method
2Nanostructured materials
2Optical materials
2Quantum well lasers
2Quantum yield
2Selective growth
2Semiconductor materials
2Thickness
1Atomic force microscopy
1Bit error rate
1Buffer layer
1Buried heterostructures
1Comparative study
1Crystal growth from vapors
1Density
1Density distribution
1Distribution functions
1Doping
1Electroabsorption modulators
1Energy barrier
1Energy gap
1Fabrication
1Far field
1Feedback
1Finite size effect
1Gain-coupled lasers
1Growth mechanism
1Indium Phosphides
1Integrated optics
1Interfaces
1Kinetics
1Masks
1Optical fibers
1Optical waveguides
1Optimization
1Quantum size effect
1Quantum wells
1Self-assembled layers
1Silicon
1Single mode fiber
1Size effect
1Spectral line shift
1Step
1Strains
1Substrates
1Surface diffusion
1Temperature dependence
1Threshold current
1Ultra-low pressure
1VPE
1XRD

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "J. Q. Pan" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "J. Q. Pan" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    J. Q. Pan
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024