J. M. Zhao < J. M. Zhou < J. Ma

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]

Ident.	Authors (with country if any)	Title
001214 (2008)		Characterization of a-plane InN film grown on r-plane sapphire by MOCVD
001300 (2007)		Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition
001345 (2007)		Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching
001595 (2006)		Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy
001609 (2006)		InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
001831 (2005)		Effect of the low-temperature buffer thickness on quality of insb grown on GaAs substrate by molecular beam epitaxy
001922 (2004)		Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique
001976 (2004)		Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source
001992 (2004)		Influence of threading dislocations on the properties of InGaN-based multiple quantum wells
001A23 (2004)		Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas
001A99 (2003-05-05)		Characteristics of a field-effect transistor with stacked InAs quantum dots
001B47 (2003)		Strain relaxation of InAs epilayer on GaAs under In-rich conditions
001B53 (2003)		Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates
001C17 (2003)		Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells
001C18 (2003)		Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells
002047 (2000)		Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer
002245 (1999)		RHEED characterization of InAs/GaAs grown by MBE
002544 (1996-11-15)		High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells
002820 (1993)		Structure of InxGa1-xAs/GaAs strained-layer superlattices
002852 (1992)		Superconductivity related to indium-diffused GaAs
002886 (1992)		Characterization of InxGa1-xAs/GaAs strained-layer superlattices by transmission electron microscopy and convergent beam electron diffraction

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List of associated KwdEn.i

Nombre de documents	Descripteur
18	Experimental study
14	III-V semiconductors
10	Photoluminescence
9	Molecular beam epitaxy
8	XRD
7	Crystal growth from vapors
7	Indium arsenides
6	Atomic force microscopy
6	Gallium arsenides
6	Semiconductor materials
5	Buffer layer
5	Epitaxial layers
5	Gallium nitrides
5	Indium nitrides
5	Multiple quantum well
5	Thin films
4	Binary compounds
4	Chemical composition
4	Gallium Indium Arsenides Mixed
4	Inorganic compound
4	Optical properties
4	RHEED
4	Roughness
4	Temperature dependence
4	Ternary compounds
3	Energy gap
3	Gallium Arsenides
3	Heteroepitaxy
3	Low temperature
3	MOCVD
3	Operating mode
2	Aluminium arsenides
2	Carrier density
2	Carrier mobility
2	Electrical properties
2	Fabrication property relation
2	Growth mechanism
2	Hall effect
2	Heterojunctions
2	Hydrostatic pressure
2	In situ
2	Interband transition
2	Mismatch lattice
2	Multilayers
2	Non radiative recombination
2	Orientation relation
2	Raman spectra
2	Rocking curve
2	Solid solutions
2	Strained quantum well
2	Strained superlattice
2	Thick films
2	Thickness
2	Transmission electron microscopy
2	Two-dimensional electron gas
1	Absorption spectra
1	Active layer
1	Adatoms
1	Aluminium oxides
1	Ammonia
1	Band offset
1	Band structure
1	CVD
1	Charge carrier recombination
1	Chemical etching
1	Confinement
1	Controlled atmospheres
1	Crystal defect
1	Crystal perfection
1	Crystal structure
1	Decomposition
1	Dislocation
1	Dislocation density
1	Dislocations
1	Doping
1	Edge dislocations
1	Effective mass
1	Electroluminescence
1	Electron diffraction
1	Electron mobility
1	Electronic properties
1	Energy level
1	Envelope function
1	Epitaxial film
1	Epitaxy
1	Fabrication structure relation
1	Flow(fluid)
1	Gallium nitride
1	Gallium phosphide
1	Gallium phosphides
1	Gas phase
1	Growth from vapor
1	Hall mobility
1	Heterojunction bipolar transistors
1	III-V compound
1	Indium Organic compounds
1	Indium antimonides
1	Indium compounds
1	Indium nitride
1	Indium phosphide

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