Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « J. J. Zhu »
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J. J. Zhao < J. J. Zhu < J. Jia  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000581 (2012) Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
000600 (2012) Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
000B11 (2010) Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
000C23 (2010) Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
000C82 (2009) The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
000C83 (2009) The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
000D17 (2009) Suppression of indium droplet formation by adding CC14 during metalorganic chemical vapor deposition growth of InN films
000E05 (2009) Mn-AlInN: a new diluted magnetic semiconductor
000E16 (2009) Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
001030 (2008) Structural characterization of Mn implanted AlInN
001065 (2008) Photoelectric characteristics of metal/InGaN/GaN heterojunction structure
001110 (2008) Investigation on the structural origin of n-type conductivity in InN films
001216 (2008) Cathodoluminescence study of GaN-based film structures
001547 (2006) Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD
001951 (2004) Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
001996 (2004) Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers
001A25 (2004) Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells
001A26 (2004) Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells

List of associated KwdEn.i

Nombre de
documents
Descripteur
11MOCVD
11XRD
8Indium nitride
7Thin films
6Gallium nitride
6III-V semiconductors
6Multiple quantum well
6Photoluminescence
5Cathodoluminescence
5Epitaxial layers
5Experimental study
5Gallium nitrides
5Indium nitrides
4Crystal growth from vapors
3Aluminium nitrides
3Atomic force microscopy
3CVD
3Electroluminescence
3Gallium Indium Nitrides Mixed
3Growth mechanism
3Interfaces
3Optical properties
3Spectral line shift
3Stress relaxation
3Temperature effects
2Adatoms
2Aluminium Indium Nitrides Mixed
2Binary compounds
2Carrier density
2Edge dislocations
2Fluctuations
2Hall effect
2Heterostructures
2III-V compound
2Imaging
2Indium
2Ion implantation
2Island structure
2Lateral growth
2Manganese additions
2Quaternary compounds
2Roughness
2Spatial resolution
2Surface diffusion
2Ternary compounds
2Thick films
1Absorption spectra
1Activation energy
1Aluminium oxide
1Annealing
1Barrier layer
1Binary compound
1Carrier mobility
1Chemical composition
1Close packing
1Composition effect
1Compressive stress
1Crystal defects
1Curie point
1Defect density
1Defect formation
1Density
1Desorption
1Diffusion
1Dislocation
1Dislocation density
1Donor center
1Droplets
1EBIC
1Electric field effects
1Epitaxy
1Etching
1Fabrication property relation
1Ferromagnetism
1Gallium
1Growth rate
1High performance
1High resolution
1Impurities
1Injection laser
1Interdiffusion
1Kinetics
1Lamellar structure
1Light emitting diodes
1Localized states
1Luminescence
1MOVPE method
1Magnetic transitions
1Mechanical properties
1Metal-semiconductor contacts
1Microstructure
1Misfit dislocations
1N type conductivity
1Nanocolumn
1Nanoparticles
1Nanostructured materials
1Nanostructures
1Non radiative recombination
1Optical transition
1Photoconductivity

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