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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « J. H. Li »
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J. H. Jiao < J. H. Li < J. H. Ma  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
001E58 (2001-04-01) Evolution of island-pit surface morphologies of InAs epilayers grown on GaAs (001) substrates
002047 (2000) Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer
002734 (1994-12-26) Surface scattering of x rays from InP (001) wafers
002741 (1994-10-01) Determination of surface roughness of InP (001) wafers by x-ray scattering
002753 (1994-07-15) X-ray analysis of strain relaxation in strained-layer superlattices
002880 (1992) Effect of graded layer on the X-ray double-crystal diffraction rocking curve

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
3XRD
2Gallium arsenides
2III-V semiconductors
2Indium arsenides
2Indium phosphides
2Molecular beam epitaxy
2Scattering
2Surface structure
1Aluminium Indium Arsenides Mixed
1Buffer layer
1Chemical composition
1Chemical interdiffusion
1Chemical polishing
1Computer simulation
1Controlled atmospheres
1Crystal growth from vapors
1Doped materials
1Epitaxial layers
1Germanium silicides
1Gradient
1Heterojunctions
1Indium compounds
1Inorganic compound
1Iron additions
1Island structure
1Mechanical polishing
1Misfit dislocations
1Morphology
1Operating mode
1Pretreatment
1Reflectivity
1Relaxation
1Rocking curve
1Roughness
1Semiconductor growth
1Semiconductor materials
1Silicon
1Spectral line profile
1Strains
1Stress relaxation
1Sulfur additions
1Superlattices
1Surface diffusion
1Surface topography
1Thickness
1Thin film
1Wafers
1X radiation
1X ray diffraction

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EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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   |clé=    J. H. Li
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