Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « J. C. Fan »
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J. C. Chiang < J. C. Fan < J. C. Ho  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
001483 (2007) As-doped p-type ZnO films prepared by cosputtering ZnO and Zn3As2 targets
001F95 (2000-10-15) Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well
002159 (1999-11-08) Persistent photoconductivity in InGaP/GaAs heterostructures
002167 (1999-09-15) Positive and negative persistent photoconductivities in semimetallic AlxGa1-xSb/InAs quantum wells
002194 (1999-03-08) The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures
002203 (1999-01-15) Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells
002298 (1998-11-01) Photoconductivity in self-organized InAs quantum dots
002336 (1998-02-15) Studies of two-subband occupied electron gas in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by far-infrared modulated photoluminescence
002343 (1998-01-01) Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies
002439 (1997-11-01) Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses
002541 (1996-12-15) Enhancement of conduction-band effective mass in III-V semiconductor alloys induced by chemical disorder
002563 (1996-07-15) Effect of disorder-induced band mixing on the conduction-band effective mass of InAlGaAs alloys lattice matched to InP
002579 (1996-01-15) Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers
002640 (1995-08-28) Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance

List of associated KwdEn.i

Nombre de
documents
Descripteur
12Experimental study
9III-V semiconductors
9Indium compounds
7Gallium arsenides
6Photoluminescence
5Photoconductivity
4Aluminium compounds
4Gallium compounds
4Interface states
4Semiconductor quantum wells
2Annealing
2Deep energy levels
2Defect states
2Effective mass
2Electron-hole recombination
2Heterostructures
2Hole traps
2Hydrogenation
2Indium arsenides
2Passivation
2Semiconductor epitaxial layers
2Semiconductor heterojunctions
2Semiconductor quantum dots
2Theoretical study
2XRD
1Aluminium arsenides
1Arsenic additions
1Arsenic compounds
1Auger effect
1Band structure
1Blue shift
1Bonding
1Buried layers
1CVD
1Capacitance
1Carrier density
1Chemical composition
1Codeposition
1Diffusion
1Disordered systems
1Electron cyclotron-resonance
1Energy gap
1Epitaxial layers
1Fermi level
1Hydrogen
1Indium additions
1Interface structure
1Localized states
1MOCVD coatings
1Molecular beam epitaxy
1Nonradiative transitions
1Numerical solution
1Ohmic contacts
1Optical properties
1Palladium
1Phosphorus additions
1Photonic band gap
1Physical vapor deposition
1Red shift
1Schottky barrier diodes
1Schottky barriers
1Semiconductor superlattices
1Semiconductor-metal boundaries
1Spectral line shift
1Sputtering
1Superlattices
1Surface recombination
1Thermionic emission
1Thin films
1Titanium
1Two-dimensional electron gas
1Vacancies
1Wide band gap semiconductors
1X-ray photoelectron spectra
1Zinc arsenides
1Zinc oxides

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