IndiumV3, Chine, Analysis, indexItem, Author.i, J. B. Liang

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List of bibliographic references

Number of relevant bibliographic references: 8.

Ident.	Authors (with country if any)	Title
002059 (2000)		Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
002137 (2000)		Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
002253 (1999)		Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots
002274 (1999)		Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy
002374 (1998)		Optical anisotropy of InAs submonolayer quantum wells in a (311)GaAs matrix
002426 (1998)		Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy
002441 (1997-11)		Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer
002446 (1997-09-15)		Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

List of associated KwdEn.i

Nombre de documents	Descripteur
8	Experimental study
8	Gallium arsenides
6	Indium arsenides
5	Molecular beam epitaxy
5	Photoluminescence
5	Quantum dots
4	Binary compounds
4	III-V semiconductors
3	Aluminium arsenides
3	Atomic force microscopy
3	Semiconductor materials
3	Ternary compounds
2	Crystal growth from vapors
2	Electronic density of states
2	Heteroepitaxy
2	Indium compounds
2	Quantum wells
2	Self assembly
2	Thin films
1	Alignment
1	Aluminium compounds
1	Characterization
1	Confinement
1	Crystal orientation
1	Electronic structure
1	Epitaxial layers
1	Fourier transform spectra
1	High electron mobility transistors
1	Interface states
1	Island structure
1	Monolayers
1	Morphology
1	Multilayers
1	Nanometer scale
1	Optical anisotropy
1	Quantum size effect
1	Rapid thermal annealing
1	Reflection spectrum
1	Reflectivity
1	Semiconductor quantum wells
1	Spatial distribution
1	Stress relaxation
1	Substrates
1	Surfaces
1	TEM
1	Temperature dependence
1	XRD

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    J. B. Liang
}}

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Serveur d'exploration sur l'Indium - Analysis (Chine)Index « Auteurs » - entrée « J. B. Liang »

List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

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Index « Auteurs » - entrée « J. B. Liang »