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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Ikai Lo »
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Iftikhar Ahmed < Ikai Lo < Ingvar Aberg  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
001C14 (2003) Electronic properties of III-V semiconductor heterostructures
001C90 (2002-04-15) Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures
002167 (1999-09-15) Positive and negative persistent photoconductivities in semimetallic AlxGa1-xSb/InAs quantum wells
002191 (1999-04-12) Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells
002203 (1999-01-15) Persistent photoconductivity in semimetallic AlxGa1-xSb/InAs quantum wells
002438 (1997-11-15) kp finite-difference method: Band structures and cyclotron resonances of AlxGa1-xSb/InAs quantum wells
002457 (1997-05-15) Effect of well thickness on the two-dimensional electron-hole system in AlxGa1-xSb/InAs quantum wells
002468 (1997-02-01) Multiple subband population in delta-doped AlAsSb/InGaAs heterostructures
002631 (1995-11-15) Persistent-photoconductivity effect in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures
002685 (1995-02-06) Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures
002748 (1994-08-22) Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells
002749 (1994-08-15) Electronic properties of AlxGa1-xSb/InAs quantum wells
002756 (1994-07-15) Negative persistent photoeffect on cyclotron resonance in InAs/Al0.5Ga0.5Sb quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Experimental study
8Photoconductivity
7III-V semiconductors
7Indium compounds
6Aluminium compounds
6Gallium compounds
6Indium arsenides
6Shubnikov-de Haas effect
5Effective mass
5Semiconductor quantum wells
4Band structure
4Gallium arsenides
4Quantum wells
3Carrier density
3Gallium antimonides
3Heterostructures
3Interface states
2Aluminium antimonides
2Conduction bands
2Deep energy levels
2Defect states
2Electron density
2Electronic structure
2Hole traps
2Semiconductor heterojunctions
2Ternary compounds
2Traps
2Two-dimensional electron gas
1Aluminium arsenides
1Aluminium nitrides
1Antimony compounds
1Arsenic compounds
1Asymmetry
1Band offset
1Carrier lifetime
1Cyclotron resonance
1Dislocation scattering
1Dislocations
1Donors
1Doped materials
1Electron cyclotron-resonance
1Electron gas
1Electron-hole coupling
1Energy gap
1Energy level population
1Far infrared radiation
1Fermi level
1Gallium nitrides
1Hall mobility
1Indium antimonides
1Interface phenomena
1Landau levels
1Laser diodes
1Lifetime
1Magnetic field effects
1Magneto-optical effects
1Phase transformations
1Photoelectric effect
1Photoluminescence
1Piezoelectric semiconductors
1Piezoelectricity
1Polarized spin
1Quantum Hall effect
1Reviews
1TEM
1Temperature dependence
1Temperature range 0000-0013 K
1Theoretical study
1Transistors
1Transmission electron microscopy
1Wide band gap semiconductors
1Zeeman effect
1Zero field splitting
1k.p calculations

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