IndiumV3, Chine, Analysis, indexItem, Author.i, Hsi-Jen Pan

Hsby. Li < Hsi-Jen Pan < Hsiang-Chen Wang

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.

Ident.	Authors (with country if any)	Title
001F13 (2001)		Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
002031 (2000-03)		Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
002150 (1999-12-01)		Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002151 (1999-12-01)		Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
002177 (1999-07-26)		Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
002181 (1999-07-05)		Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor
002192 (1999-04-12)		Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors
002193 (1999-04-05)		Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
002305 (1998-09-07)		Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors

List of associated KwdEn.i

Nombre de documents	Descripteur
9	Gallium arsenides
8	Experimental study
8	III-V semiconductors
8	Indium compounds
4	Gallium compounds
4	Heterojunction bipolar transistors
3	High electron mobility transistors
3	Schottky barriers
2	Aluminium compounds
2	Electrical conductivity
2	MOCVD
2	Phosphorus compounds
2	semiconductor device breakdown
1	Aluminium arsenides
1	Binary compound
1	Capacitance
1	Conduction bands
1	Current density
1	Doping profiles
1	Electric breakdown
1	Illumination
1	Indium arsenides
1	Indium phosphide
1	Insulated gate field effect transistors
1	Interface states
1	Minority carriers
1	Negative differential conductivity
1	Planar doping
1	Quaternary compound
1	Resonant tunneling transistors
1	Semiconductor heterojunctions
1	Semiconductor superlattices
1	Voltage current curve
1	Wide band gap semiconductors

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "Hsi-Jen Pan"

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "Hsi-Jen Pan" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    Hsi-Jen Pan
}}

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Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

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Serveur d'exploration sur l'Indium - Analysis (Chine)Index « Auteurs » - entrée « Hsi-Jen Pan »

List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Hsi-Jen Pan »