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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « HONGLING XIAO »
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HONGLIN LIU < HONGLING XIAO < HONGMEI QIU  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000072 (2013) Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell
000419 (2012) Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures
000665 (2011) Theoretical study on InxGa1-xN/GaN quantum dots solar cell
000940 (2011) Behavioural investigation of InN nanodots by surface topographies and phase images
000948 (2011) An investigation on IXxGa1-xN/GaN multiple quantum well solar cells
000F96 (2008) Theoretical design and performance of InxGa1-xN two-junction solar cells
001264 (2007) The influence of internal electric fields on the transition energy of InGaN/GaN quantum well
001308 (2007) Simulation of In0.65Ga0.35 N single-junction solar cell
001326 (2007) Photovoltaic effects in InGaN structures with p-n junctions
001440 (2007) Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD
001813 (2005) Growth and characterization of InN on sapphire substrate by RF-MBE

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Solar cell
5Thickness
4Gallium Indium Nitrides Mixed
4Gallium nitride
4III-V semiconductors
4Indium nitride
4Performance
3Atomic force microscopy
3III-V compound
3Indium nitrides
3XRD
2Chemical composition
2Doping
2Energy gap
2Experimental result
2Gallium nitrides
2Heterostructures
2Illumination
2Inorganic compounds
2MOCVD
2Nanostructured materials
2Nitrides
2Short circuit currents
2Thin films
1Aluminium Gallium Nitrides Mixed
1Aluminium nitride
1Annealing
1Band structure
1Binary compounds
1Buffer layer
1Carrier density
1Carrier mobility
1Charge carrier density
1Chemical bonds
1Computerized simulation
1Confinement
1Crystal growth from vapors
1Defects
1Diode
1Distribution functions
1Droplets
1Electric field effects
1Energy level
1Experimental data
1Experimental study
1Growth mechanism
1Growth rate
1Indium
1Indium additions
1Kronig Penney model
1Light emitting diodes
1Luminescence
1MOVPE method
1Magnesium additions
1Molecular beam epitaxy
1Monolayers
1Multiple quantum well
1Nanodot
1Optical properties
1Optoelectronic devices
1Perturbation theory
1Photoluminescence
1Photovoltaic effects
1Plasma assisted processing
1Potential well
1Quantum dot
1Quantum effect
1Quantum number
1Quantum theory
1Quantum well
1Quantum wells
1Quantum yield
1RBS
1RHEED
1Radiofrequency
1Roughness
1Schottky barriers
1Schrödinger equation
1Self consistency
1Silicon
1Silicon additions
1Stacking sequence
1Stress relaxation
1Structural analysis
1Superlattices
1Surface morphology
1Surface topography
1Tandem solar cell
1Thermal annealing
1Thermal decomposition
1Thick film
1Two-dimensional electron gas
1Ultraviolet radiation
1p n junctions

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