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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « HONG JIANG »
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HONG HE < HONG JIANG < HONG LI  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000805 (2011) Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
000808 (2011) Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000C01 (2010) Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method
000E20 (2009) Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition
000F05 (2009) Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique
000F62 (2009) A study of two-step growth and properties of In0.82Ga0.18As on InP
001123 (2008) Improved field emission characteristic of carbon nanotubes by an Ag micro-particle intermediation layer
001186 (2008) Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
001187 (2008) Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD
002224 (1999) The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors
002408 (1998) Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
002425 (1998) Analysis of the R0A product and detectivity in a GaInAsSb infrared photovoltaic detector
002589 (1996) Study of GaInAsSb epilayer by scanning electron acoustic microscopy

List of associated KwdEn.i

Nombre de
documents		Descripteur
9MOCVD
8Epitaxial layers
7Scanning electron microscopy
6Buffer layer
6Hall effect
6XRD
5Gallium arsenides
5Semiconductor materials
4Indium arsenides
3Carrier density
3Experimental study
3Gallium antimonides
3Indium antimonides
3Indium phosphide
3Low pressure
3Photoluminescence
3Quaternary compounds
3Raman spectra
2Binary compounds
2Carrier mobility
2Crystal morphology
2Gallium Indium Arsenides Mixed
2Indium Antimonides arsenides
2Mismatch lattice
2Surface morphology
2Surface structure
2Surfaces
2Thickness
2Thin films
2p n junctions
1Acoustic microscopy
1Atmospheric pressure
1Atomic force microscopy
1CVD
1Carbon nanotubes
1Chemical composition
1Compressive stress
1Cost lowering
1Crystal growth from vapors
1Current density
1Deposition process
1Droplets
1Electric field
1Electrochemical method
1Electron mobility
1Epitaxy
1Field emission
1Field emitter
1Film growth
1Frequency shift
1Gallium Antimonides arsenides
1Gallium Indium Arsenides
1Grain boundaries
1Growth mechanism
1Growth rate
1Heat treatments
1Heterojunctions
1Homojunctions
1III-V compound
1III-V semiconductors
1Infrared detectors
1Inorganic compounds
1Interfaces
1Large scale
1Microelectronic fabrication
1Misfit dislocations
1Morphology
1Nanoelectronics
1Nanostructures
1Nanotechnology
1Nanotube devices
1Nanowires
1Noise
1Optical properties
1Performance evaluation
1Phonons
1Photodetectors
1Photovoltaic effects
1Quantum efficiency
1Radiation detectors
1Raman scattering
1Solid solutions
1Spectral line shift
1Strained layer
1Stress effects
1Theoretical study
1Thermal annealing
1Thick films
1Transmission electron microscopy
1Tunnel effect

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