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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « HANG SONG »
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HANG JI < HANG SONG < HANG ZANG  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000187 (2013) Less contribution of nonradiative recombination in ZnO nails compared with rods
000805 (2011) Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
000808 (2011) Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000907 (2011) Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
000C01 (2010) Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method
000E20 (2009) Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition
000F05 (2009) Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique
000F62 (2009) A study of two-step growth and properties of In0.82Ga0.18As on InP
001123 (2008) Improved field emission characteristic of carbon nanotubes by an Ag micro-particle intermediation layer
001186 (2008) Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
001187 (2008) Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD

List of associated KwdEn.i

Nombre de
documents		Descripteur
9MOCVD
7Buffer layer
7Epitaxial layers
7Scanning electron microscopy
7XRD
6Hall effect
4Photoluminescence
3Gallium Indium Arsenides Mixed
3Indium phosphide
3Low pressure
3Raman spectra
2Atomic force microscopy
2Binary compounds
2Carrier density
2Carrier mobility
2Crystal morphology
2Gallium arsenides
2Mismatch lattice
2Optical properties
2Phonons
2Semiconductor materials
2Surface morphology
2Surface structure
2Thickness
1Activation energy
1Annealing
1Bound exciton
1Carbon nanotubes
1Catalysts
1Compressive stress
1Cost lowering
1Current density
1Deep level
1Deposition process
1Droplets
1Electric field
1Electrochemical method
1Field emission
1Field emitter
1Film growth
1Fourier-transformed infrared spectrometry
1Frequency shift
1Gallium Indium Arsenides
1Growth mechanism
1Growth rate
1Heat treatments
1Hydrothermal synthesis
1II-VI semiconductors
1III-V compound
1III-V semiconductors
1Indium Antimonides arsenides
1Indium arsenides
1Inorganic compounds
1Large scale
1Microelectronic fabrication
1Microstructure
1Misfit dislocations
1Nanoelectronics
1Nanostructures
1Nanotechnology
1Nanotube devices
1Nanowires
1Non radiative recombination
1Raman scattering
1Recrystallization
1Scanning force microscopy
1Spectral line shift
1Strained layer
1Stress effects
1Temperature dependence
1Thermal annealing
1Transition element compounds
1Transmission electron microscopy
1Zinc oxide

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