H. Y. Zhou < H. Yang < H. Ye

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]

Ident.	Authors (with country if any)	Title
000069 (2013)		Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition
000075 (2013)		The investigation of GaInP solar cell grown by all-solid MBE
000123 (2013)		Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells
000308 (2013)		Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
000600 (2012)		Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
000B11 (2010)		Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
000C23 (2010)		Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
000C82 (2009)		The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
000C83 (2009)		The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
000D17 (2009)		Suppression of indium droplet formation by adding CC14 during metalorganic chemical vapor deposition growth of InN films
000E16 (2009)		Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
001065 (2008)		Photoelectric characteristics of metal/InGaN/GaN heterojunction structure
001110 (2008)		Investigation on the structural origin of n-type conductivity in InN films
001216 (2008)		Cathodoluminescence study of GaN-based film structures
001547 (2006)		Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD
001588 (2006)		Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
001636 (2006)		Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition
001705 (2005)		The structural and optical properties of Cu2O films electrodeposited on different substrates
001728 (2005)		Study on the thermal stability of InN by in-situ laser reflectance system
001783 (2005)		Low-temperature growth of InN by MOCVD and its characterization
001872 (2004-06-28)		Investigations on V-defects in quaternary AlInGaN epilayers

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List of associated KwdEn.i

Nombre de documents	Descripteur
15	MOCVD
14	III-V semiconductors
13	Photoluminescence
13	XRD
10	Experimental study
8	Indium nitrides
8	Thin films
7	Crystal growth from vapors
7	Growth mechanism
7	Indium nitride
6	CVD
6	Cathodoluminescence
6	Gallium nitrides
6	Multiple quantum well
5	Atomic force microscopy
5	Binary compounds
5	Epitaxial layers
5	Gallium nitride
4	Interfaces
4	Optical properties
4	Spectral line shift
4	Stress relaxation
3	Aluminium nitrides
3	Buffer layer
3	Dislocation density
3	Electroluminescence
3	Gallium compounds
3	Gallium phosphide
3	Heterostructures
3	Indium
3	Indium compounds
3	Indium phosphide
3	MOVPE method
3	Microstructure
3	Reflectivity
3	Roughness
3	Semiconductor materials
3	Temperature dependence
3	Temperature effects
3	Ternary compounds
3	Threading dislocation
2	Activation energy
2	Adatoms
2	Carrier density
2	Copper oxides
2	Crystal perfection
2	Droplets
2	Edge dislocations
2	Electrodeposition
2	Fluctuations
2	Gallium
2	Gallium Indium Nitrides Mixed
2	Growth rate
2	Hall effect
2	III-V compound
2	Imaging
2	Inorganic compounds
2	Island structure
2	Lateral growth
2	Localized states
2	Mechanical properties
2	Morphology
2	Nucleation
2	Potential barrier
2	Precursor
2	Quaternary compounds
2	Scanning electron microscopy
2	Semiconductor epitaxial layers
2	Solar cell
2	Spatial resolution
2	Surface diffusion
2	Surface morphology
2	Ternary compound
2	Thick films
2	Thickness
2	Transmission electron microscopy
2	Wide band gap semiconductors
2	p n junction
1	Absorption coefficients
1	Aluminium arsenides
1	Aluminium compounds
1	Aluminium oxide
1	Angular variation
1	Band structure
1	Barrier layer
1	Binary compound
1	Carrier mobility
1	Characterization
1	Charge carrier recombination
1	Chemical composition
1	Close packing
1	Coalescence
1	Coated material
1	Composition effect
1	Compressive stress
1	Concentration effect
1	Crystal defects
1	Crystal doping
1	Crystal structure
1	Cubic lattices

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