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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « H. M. Shieh »
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H. M. Lee < H. M. Shieh < H. M. Wang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001C96 (2002-03-18) Real index-guided InGaAlP red lasers with buried tunnel junctions
001E70 (2001-02-12) Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers
002017 (2000-05-22) In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors
002323 (1998-05) Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
002684 (1995-02-06) Very strong negative differential resistance real-space transfer transistor using a multiple δ-doping GaAs/InGaAs pseudomorphic heterostructure
002762 (1994-05-30) Mobility enhancement in double δ-doped GaAs/InxGa1-xAs/GaAs pseudomorphic structures by grading the heterointerfaces
002772 (1994-01-01) Secondary-ion mass spectrometry analysis in pseudomorphic GaAs/InGaAs/GaAs heterostructures utilizing a δ-doping superlattice
002773 (1994-01) Influences of δ -doping time and spacer thickness on the mobility and two-dimensional electron gas concentration in δ -doped GaAs/InGaAs/GaAs pseudomorphic heterostructures

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
7Gallium arsenides
4CVD
4Heterostructures
4III-V semiconductors
4Indium arsenides
4Indium compounds
3Doped materials
3Gallium compounds
3SIMS
3Semiconductor growth
3Ternary compounds
2Aluminium compounds
2Carrier mobility
2Electron mobility
2Energy gap
2Interface states
2Waveguide lasers
1Breakdown
1Conduction bands
1Crystal doping
1Electron density
1Electron gas
1Fabrication
1Field effect transistors
1Heterojunction bipolar transistors
1IV characteristic
1Instrumentation
1Interface structure
1Leakage current
1MOCVD
1MOCVD coatings
1Magnetoresistance
1Monolithic integrated circuits
1Photoluminescence
1Quantum well lasers
1Quantum wells
1Refractive index
1Semiconductor heterojunctions
1Semiconductor lasers
1Superlattices
1Surface recombination
1Switching
1Temperature range 65-273 K
1Transistors
1VPE

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