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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « H. H. Lin »
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H. H. He < H. H. Lin < H. H. Sun  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
001897 (2004-04-05) Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells
001A81 (2003-08-11) Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers
001A89 (2003-06-23) Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
001A93 (2003-06-02) Temperature dependence of photoreflectance in InAs/GaAs quantum dots
001C81 (2002-05-13) Photoluminescence study of hydrogen passivation in InAs1-xNx/InGaAs single-quantum well on InP
001D02 (2002-02-04) Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x
001F95 (2000-10-15) Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well
002298 (1998-11-01) Photoconductivity in self-organized InAs quantum dots
002299 (1998-11) BCl3/Ar reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors
002309 (1998-08-01) Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes
002335 (1998-03-09) Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy
002439 (1997-11-01) Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses
002445 (1997-10-15) Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy
002635 (1995-10-16) Study of surface Fermi level and surface state distribution in InAlAs surface-intrinsic-n+ structure by photoreflectance
002638 (1995-09-15) Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers
002640 (1995-08-28) Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance
002664 (1995-05-15) Photoreflectance characterization of graded InAlAs/InGaAs heterojunction bipolar transistor layers
002666 (1995-05-08) Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance
002760 (1994-06-13) Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures
002767 (1994-04-11) Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor

List of associated KwdEn.i

Nombre de
documents		Descripteur
20Experimental study
15Gallium arsenides
13III-V semiconductors
13Indium compounds
7Indium arsenides
6Aluminium arsenides
6Photoluminescence
5Energy gap
5Photoreflectance
5Semiconductor quantum wells
4Bipolar transistors
4Heterostructures
4Interface states
4Molecular beam epitaxy
4Semiconductor quantum dots
3Conduction bands
3Effective mass
3Fermi level
3Heterojunctions
3Semiconductor epitaxial layers
2Arsenic compounds
2Chemical composition
2Current density
2Electric fields
2Electron cyclotron-resonance
2Excitons
2Franz-Keldysh effect
2Graded band gaps
2Interface structure
2Microstructure
2Modulation spectroscopy
2Photoconductivity
2Quantum wells
2Reflection spectroscopy
2Ternary compounds
2Valence bands
1Ambient temperature
1Annealing
1Atomic force microscopy
1Band structure
1Carrier density
1Charge density
1Chemical beam epitaxy
1Chemical interdiffusion
1Defect states
1Depth profiles
1Doping profiles
1Electron-hole recombination
1Electroreflectance
1Energy-level density
1Energy-level transitions
1Epitaxial layers
1Excited states
1Gallium compounds
1Ground states
1Hall effect
1High electron mobility transistors
1Hydrogenation
1Infrared spectra
1Interface phonons
1Iron
1Laser cavity resonators
1Localized states
1Optical harmonic generation
1Optical reflection
1Passivation
1Photorefractive effect
1Piezoelectric semiconductors
1Piezoelectricity
1Quantum well lasers
1Red shift
1Reflectivity
1Self-assembly
1Semiconductor growth
1Semiconductor heterojunctions
1Semiconductor junctions
1Semiconductor superlattices
1Spectral reflectance
1Sputter etching
1Stimulated Raman scattering
1Surface recombination
1Surface states
1Surface topography
1Temperature dependence
1Theoretical study
1Thermionic emission
1Thin films
1Tin
1p i n diodes
1quantum dot lasers

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