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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « H. Chen »
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H. Chang < H. Chen < H. D. Chang  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
001214 (2008) Characterization of a-plane InN film grown on r-plane sapphire by MOCVD
001300 (2007) Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition
001345 (2007) Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching
001556 (2006) Selective separation of In(III), Ga(III), and Zn(II) from dilute solution using solvent-impregnated resin containing Di(2-ethylhexyl) phosphoric acid
001632 (2006) Extraction and separation of In(III), Ga(III) and Zn(II) from sulfate solution using extraction resin
001922 (2004) Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique
001992 (2004) Influence of threading dislocations on the properties of InGaN-based multiple quantum wells
001997 (2004) InGaN/GaN multi-quantum dot light-emitting diodes
001B47 (2003) Strain relaxation of InAs epilayer on GaAs under In-rich conditions
001B53 (2003) Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates
001C17 (2003) Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells
001C18 (2003) Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells
002047 (2000) Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer
002245 (1999) RHEED characterization of InAs/GaAs grown by MBE

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
10III-V semiconductors
6Crystal growth from vapors
6XRD
5Gallium nitrides
5Indium arsenides
5Indium nitrides
5Molecular beam epitaxy
5Photoluminescence
4Atomic force microscopy
4Epitaxial layers
4MOCVD
4Multiple quantum well
4Thin films
3Buffer layer
3Heteroepitaxy
3Operating mode
3Optical properties
3RHEED
2Electroluminescence
2Fabrication property relation
2Gallium arsenides
2Gallium nitride
2Growth mechanism
2Heterojunctions
2In situ
2Indium nitride
2Multilayers
2Non radiative recombination
2Orientation relation
2Temperature dependence
1Absorption spectra
1Active layer
1Aluminium oxides
1Ammonia
1Aqueous medium
1Benzene(divinyl) copolymer
1Binary compounds
1CVD
1Carrier density
1Carrier mobility
1Cationic resin
1Chemical composition
1Chemical etching
1Chemical vapor deposition
1Controlled atmospheres
1Crystal perfection
1Crystal structure
1Dislocations
1Electrical properties
1Electronic properties
1Energy gap
1Exciton
1Extraction
1Extraction agent
1Fabrication structure relation
1Flow(fluid)
1Gallium III Ions
1Gas phase
1Hall effect
1Hydrometallurgy
1III-V compound
1Impregnated material
1Indium III Ions
1Indium Organic compounds
1Injection current
1Ion extraction
1Ionic selectivity
1Light emitting diode
1Localization
1Low pressure
1Low temperature
1Metal ion
1Misfit dislocations
1Mismatch lattice
1Mixing ratio
1Multi-quantum dot
1Nanostructured materials
1Optimization
1Organic phosphate
1Precursor
1Pretreatment
1Quantum dot
1Raman spectra
1Rocking curve
1Roughness
1SAED
1Self assembly
1Semiconductor materials
1Separation
1Solid solutions
1Stress relaxation
1Structure relaxation
1Styrene copolymer
1Sulfates
1Temperature effects
1Template reaction
1Ternary compound
1Ternary compounds
1Thick films

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