IndiumV3, Chine, Analysis, indexItem, Author.i, G. Y. Zhang

G. Y. Yao < G. Y. Zhang < G. Y. Zhong

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.

Ident.	Authors (with country if any)	Title
000560 (2012)		Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes
000823 (2011)		Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
001262 (2007)		The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
001947 (2004)		Study of photoluminescence and absorption in phase-separation InGaN films
001971 (2004)		Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off
001A45 (2004)		An approach to determine the chemical composition in InGaN/GaN multiple quantum wells
001B89 (2003)		InGaN/GaN MQW high brightness LED grown by MOCVD
002114 (2000)		Elastic strain in InGaN and AlGaN layers
002284 (1999)		Effect of erbium concentration on upconversion luminescence of Er:Yb :phosphate glass exited by InGaAs laser diode
002406 (1998)		Growth and doping characteristics of InGaN films grown by low pressure MOCVD

List of associated KwdEn.i

Nombre de documents	Descripteur
6	Gallium nitrides
6	Indium nitrides
6	Photoluminescence
5	MOCVD
5	Ternary compounds
5	XRD
4	Experimental study
4	Multiple quantum well
4	Semiconductor materials
3	Gallium nitride
3	III-V compound
3	III-V semiconductors
3	Indium nitride
3	RBS
3	Spectral line shift
2	Binary compound
2	Cathodoluminescence
2	Chemical composition
2	Excitation spectrum
2	Inorganic compounds
2	Light emitting diode
2	Luminescence
2	MOVPE method
2	Nanostructured materials
2	Optoelectronic device
2	Quantum dots
2	Radiative recombination
2	Thickness
2	Thin films
1	Absorption spectra
1	Aluminium nitrides
1	Annealing
1	Atomic force microscopy
1	Backscattering
1	Binary compounds
1	Carrier lifetime
1	Charge carrier injection
1	Composition effect
1	Compressive stress
1	Current density
1	Deep level
1	Defect density
1	Desorption
1	Digital simulation
1	Doped materials
1	Electroluminescence
1	Emission spectrum
1	Energy level
1	Energy level population
1	Epitaxy
1	Erbium ion
1	Experimental result
1	Fabrication property relation
1	Flip chip bonding
1	Gallium
1	Gallium Arsenides
1	Growth mechanism
1	Heterostructures
1	Inclusions
1	Indium
1	Indium Arsenides
1	Injection laser
1	Interfaces
1	Lattice distortion
1	Lattice parameters
1	Lift off
1	Light emitting diodes
1	Luminescence spectrum
1	Mechanical stress
1	Microelectronic fabrication
1	Microstructure
1	Nitrides
1	Optical microscopy
1	Optical properties
1	Optoelectronic devices
1	Phase separation
1	Piezoelectric materials
1	Quantum dot
1	Quantum wells
1	Quantum yield
1	Raman spectra
1	Red light
1	Roughness
1	Silicon additions
1	Size effect
1	Stokes shift
1	Strained layer
1	Temperature dependence
1	Temperature effect
1	Ternary compound
1	Time resolution
1	Time resolved spectra
1	Urbach rule
1	VPE
1	Vegard law
1	Voltage current curve
1	Wafers
1	X ray diffraction
1	X ray diffractometry
1	Zinc additions

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   |flux=    Chine
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   |clé=    G. Y. Zhang
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List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

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Index « Auteurs » - entrée « G. Y. Zhang »