Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « G. Y. Zhang »
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G. Y. Yao < G. Y. Zhang < G. Y. Zhong  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000560 (2012) Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes
000823 (2011) Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
001262 (2007) The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
001947 (2004) Study of photoluminescence and absorption in phase-separation InGaN films
001971 (2004) Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off
001A45 (2004) An approach to determine the chemical composition in InGaN/GaN multiple quantum wells
001B89 (2003) InGaN/GaN MQW high brightness LED grown by MOCVD
002114 (2000) Elastic strain in InGaN and AlGaN layers
002284 (1999) Effect of erbium concentration on upconversion luminescence of Er:Yb :phosphate glass exited by InGaAs laser diode
002406 (1998) Growth and doping characteristics of InGaN films grown by low pressure MOCVD

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Gallium nitrides
6Indium nitrides
6Photoluminescence
5MOCVD
5Ternary compounds
5XRD
4Experimental study
4Multiple quantum well
4Semiconductor materials
3Gallium nitride
3III-V compound
3III-V semiconductors
3Indium nitride
3RBS
3Spectral line shift
2Binary compound
2Cathodoluminescence
2Chemical composition
2Excitation spectrum
2Inorganic compounds
2Light emitting diode
2Luminescence
2MOVPE method
2Nanostructured materials
2Optoelectronic device
2Quantum dots
2Radiative recombination
2Thickness
2Thin films
1Absorption spectra
1Aluminium nitrides
1Annealing
1Atomic force microscopy
1Backscattering
1Binary compounds
1Carrier lifetime
1Charge carrier injection
1Composition effect
1Compressive stress
1Current density
1Deep level
1Defect density
1Desorption
1Digital simulation
1Doped materials
1Electroluminescence
1Emission spectrum
1Energy level
1Energy level population
1Epitaxy
1Erbium ion
1Experimental result
1Fabrication property relation
1Flip chip bonding
1Gallium
1Gallium Arsenides
1Growth mechanism
1Heterostructures
1Inclusions
1Indium
1Indium Arsenides
1Injection laser
1Interfaces
1Lattice distortion
1Lattice parameters
1Lift off
1Light emitting diodes
1Luminescence spectrum
1Mechanical stress
1Microelectronic fabrication
1Microstructure
1Nitrides
1Optical microscopy
1Optical properties
1Optoelectronic devices
1Phase separation
1Piezoelectric materials
1Quantum dot
1Quantum wells
1Quantum yield
1Raman spectra
1Red light
1Roughness
1Silicon additions
1Size effect
1Stokes shift
1Strained layer
1Temperature dependence
1Temperature effect
1Ternary compound
1Time resolution
1Time resolved spectra
1Urbach rule
1VPE
1Vegard law
1Voltage current curve
1Wafers
1X ray diffraction
1X ray diffractometry
1Zinc additions

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