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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « G. Wang »
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G. W. Yang < G. Wang < G. Wu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
001011 (2008) Synthesis, optical and transport properties of single-crystal N-deficient InN nanowires
001721 (2005) Synthesis and characterization of In2O3/SnO2 hetero-junction beaded nanowires
001C51 (2003) A novel emitting polymer with bipolar carrier transporting abilities
002087 (2000) Native oxided AlAs current blocking layer for AlGaInP high brightness light emitting diodes
002353 (1998) The importance of low-temperature deposition of organic emitting layer on electroluminescent device performance
002373 (1998) Optical disk mode pattern of InGaP microdisks emitting at 0.65 μm
002398 (1998) High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD
002450 (1997-07-28) Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature
002517 (1997) Electron-hole recombination range under the control of a Langmuir-Blodgett film barrier
002612 (1996) Influence of the surface pressure of Langmuir-Blodgett films on the efficiency of organic electroluminescence
002619 (1996) Enhancement of organic electroluminescent intensity by charge transfer from guest to host

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
4Electroluminescence
3Electroluminescent device
3Optical properties
3Photoluminescence
2Gallium Phosphides
2Indium Phosphides
2Langmuir Blodgett layer
2Methyl methacrylate polymer
2Monocrystals
2Nanowires
2Semiconductor lasers
2Voltage current curve
1Aging test
1Aluminium Arsenides
1Aluminium Phosphides
1Aluminium arsenides
1Aluminium phosphide
1Aniline derivative polymer
1Aromatic polymer
1Atomic force microscopy
1Blocking layer
1Brightness
1Carbazole derivative polymer
1Carrier lifetime
1Charge carrier recombination
1Conjugated polymer
1Crystal form
1Defects
1Doped materials
1Electrical characteristic
1Electrical conductivity
1Electrical properties
1Electrochemical properties
1Electroluminescent devices
1Electron hole pair
1Electron transfer
1Experimental result
1Fabrication
1Fluorescence
1Functional polymer
1Gallium Arsenides
1Gallium compounds
1Gallium nitrides
1Gallium phosphide
1Growth mechanism
1Heterojunctions
1III-V semiconductors
1IV characteristic
1Indium compounds
1Indium nitride
1Indium nitrides
1Indium oxides
1Indium phosphide
1Injection current
1Injection laser
1Interface states
1Interfaces
1Interfacial layer
1Light emitting diode
1Line intensity
1Line widths
1Luminous intensity
1MOVPE method
1Measurement method
1Metallic conduction
1Microstructure
1Organic material
1Organic polymers
1Orientation
1Oxadiazole derivatives
1Oxide layer
1Performance evaluation
1Preparation
1Quantum wells
1Quaternary compound
1Quaternary compounds
1Quinoline derivatives
1Radiative lifetimes
1Raman spectra
1Recombination
1Reliability
1Room temperature
1SAED
1Sandwich compound
1Sandwich structure
1Scanning electron microscopy
1Self condensation
1Semiconductor materials
1Semiconductor quantum wells
1Solution polycondensation
1Spin-on coating
1Spontaneous emission
1Stoichiometry
1Surface recombination
1Synthesis
1Temperature dependence
1Ternary compounds
1Thermal method
1Thin films

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