F. Q. Huang < F. Q. Liu < F. Q. Xu

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]

Ident.	Authors (with country if any)	Title
000149 (2013)		Photoluminescence properties of porous InP filled with ferroelectric polymers
000C25 (2010)		Blue-shift photoluminescence from porous InAlAs
001B29 (2003)		The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing
001C33 (2003)		Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser
001C40 (2003)		Atomic and electronic structure of (√3 x √3)R 30°: In phase on Cu(111)
001D34 (2002)		Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
001D61 (2002)		Influence of strain on annealing effects of In(Ga)As quantum dots
001E38 (2001-08-15)		Thermal redistribution of photocarriers between bimodal quantum dots
001F21 (2001)		Optical properties of InGaAs quantum dots formed on InAlAs wetting layer
001F31 (2001)		Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy
001F46 (2001)		Growth and characterization of InGaAs/InAlAs quantum cascade lasers
002048 (2000)		Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate
002058 (2000)		Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
002059 (2000)		Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
002063 (2000)		Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates
002070 (2000)		Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy
002071 (2000)		Room temperature (34 °C) operation of strain-compensated quantum cascade lasers
002228 (1999)		Substrate surface atomic structure influence on the growth of InAlAs quantum dots
002253 (1999)		Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) : Special issue papers on quantum dots
002426 (1998)		Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy
002441 (1997-11)		Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

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List of associated KwdEn.i

Nombre de documents	Descripteur
17	Experimental study
15	Photoluminescence
14	Indium arsenides
13	Gallium arsenides
13	Quantum dots
12	Molecular beam epitaxy
11	III-V semiconductors
8	Crystal growth from vapors
7	Aluminium arsenides
7	Self assembly
6	Atomic force microscopy
6	Semiconductor materials
5	Epitaxial layers
4	Heteroepitaxy
4	Island structure
4	Nanostructures
3	Binary compounds
3	Buffer layer
3	Morphology
3	Surface structure
3	Ternary compounds
3	XRD
2	Atomic structure
2	Continuous wave lasers
2	Current density
2	Fabrication property relation
2	Heterojunctions
2	Indium compounds
2	Mismatch lattice
2	Optical properties
2	Porous materials
2	Quantum size effect
2	RHEED
2	Rapid thermal annealing
2	Self-assembled layers
2	Semiconductor lasers
2	Spectral line shift
2	Surfaces
2	TEM
2	Temperature dependence
2	Thin films
1	Absorption spectra
1	Absorption spectroscopy
1	Aluminium Indium Arsenides Mixed
1	Aluminium compounds
1	Angular resolution
1	Aqueous solutions
1	Band structure
1	Characterization
1	Conduction band
1	Confinement
1	Crystal orientation
1	Deep level
1	Diffusion
1	Dimension spectrum
1	Dimensions
1	Electric power generation
1	Electrochemical etching
1	Electronic structure
1	Epitaxy
1	Experiments
1	Fourier transform spectra
1	High electron mobility transistors
1	In situ
1	Indium
1	Indium Phosphides
1	Indium phosphide
1	Indium phosphides
1	Interdiffusion
1	Ion exchange
1	Line intensity
1	Microstructure
1	Modulated materials
1	Multilayers
1	Nanometer scale
1	Operating mode
1	Ordering
1	Passivation
1	Phosphides
1	Phosphorus
1	Photoconductivity
1	Photoelectron spectra
1	Polymers
1	Property structure relationship
1	Quantum cascade (QC) lasers
1	Quantum cascade laser
1	Quantum wells
1	Quantum wires
1	STM
1	Self-assembly
1	Semiconducting indium compounds
1	Semiconducting indium gallium arsenide
1	Semiconductor growth
1	Semiconductor quantum dots
1	Solid source molecular beam epitaxy
1	Strain-compensated quantum cascade (QC) lasers
1	Stresses
1	Substrates
1	Surface termination
1	Synchrotron radiation

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