IndiumV3, Chine, Analysis, indexItem, Author.i, DABING LI

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List of bibliographic references

Number of relevant bibliographic references: 10.

Ident.	Authors (with country if any)	Title
000805 (2011)		Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
000808 (2011)		Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000907 (2011)		Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
000C01 (2010)		Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method
000E20 (2009)		Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition
001952 (2004)		Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition
001A29 (2004)		Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure
001A34 (2004)		Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition
001B46 (2003)		Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate
001D36 (2002)		Strain relaxation of InP film directly grown on GaAs patterned compliant substrate

List of associated KwdEn.i

Nombre de documents	Descripteur
8	MOCVD
6	Buffer layer
6	Photoluminescence
6	XRD
4	Crystal growth from vapors
4	Epitaxial layers
4	Experimental study
4	Gallium nitrides
4	Hall effect
4	III-V semiconductors
4	Indium nitrides
4	Low pressure
4	Scanning electron microscopy
3	Aluminium nitrides
3	Atomic force microscopy
3	Semiconductor materials
3	Thin films
2	CVD
2	Dislocations
2	Gallium Indium Arsenides Mixed
2	Gallium arsenides
2	Indium phosphide
2	Mismatch lattice
2	Morphology
2	Nanostructures
2	Quantum dots
2	Stress relaxation
2	Ternary compounds
1	Activation energy
1	Annealing
1	Band structure
1	Binary compounds
1	Carrier mobility
1	Characterization
1	Charge carriers
1	Charge transfer
1	Compliance
1	Crystal perfection
1	Deposition process
1	Droplets
1	Electron-defect interactions
1	Energy dispersive spectroscopy
1	Film growth
1	Growth mechanism
1	Growth rate
1	Heat treatments
1	Heteroepitaxy
1	Heterojunctions
1	Heterostructures
1	III-V compound
1	Indium arsenides
1	Indium phosphides
1	Inorganic compounds
1	Localized exciton
1	Low temperature
1	MOVPE method
1	Molecular beam epitaxy
1	Monocrystals
1	Multilayers
1	Nanotechnology
1	Nanowires
1	Optical microscopy
1	Passivation
1	Patterning
1	Phosphides
1	Poisson equation
1	Potential well
1	Pretreatment
1	Quantity ratio
1	Quaternary compounds
1	RBS
1	Radiative recombination
1	Raman scattering
1	Raman spectra
1	Recrystallization
1	Residual stresses
1	Scanning force microscopy
1	Schroedinger equation
1	Self consistency
1	Square-well potential
1	Stacking sequence
1	Subband
1	Substrates
1	Surface morphology
1	Surface structure
1	Surface treatments
1	Surfaces
1	Temperature dependence
1	Thermal annealing
1	Thermal stresses
1	Thickness
1	Transmission electron microscopy
1	Two-dimensional electron gas
1	VPE
1	Wave functions

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
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   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    DABING LI
}}

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List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « DABING LI »