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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « D. S. Jiang »
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D. S. Chen < D. S. Jiang < D. S. Li  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000581 (2012) Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
000600 (2012) Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
000B11 (2010) Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
000C23 (2010) Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
000C82 (2009) The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
000C83 (2009) The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
000D17 (2009) Suppression of indium droplet formation by adding CC14 during metalorganic chemical vapor deposition growth of InN films
000E16 (2009) Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
001065 (2008) Photoelectric characteristics of metal/InGaN/GaN heterojunction structure
001110 (2008) Investigation on the structural origin of n-type conductivity in InN films
001216 (2008) Cathodoluminescence study of GaN-based film structures
001547 (2006) Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD
001872 (2004-06-28) Investigations on V-defects in quaternary AlInGaN epilayers
001B68 (2003) Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells
001D62 (2002) Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots
001F20 (2001) Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
001F85 (2000-12-18) Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells
002071 (2000) Room temperature (34 °C) operation of strain-compensated quantum cascade lasers
002889 (1992) A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Indium nitride
8MOCVD
7Experimental study
7Photoluminescence
6Cathodoluminescence
5Gallium nitride
5III-V semiconductors
5Multiple quantum well
5Spectral line shift
5XRD
4Gallium arsenides
4Semiconductor materials
4Thin films
3Gallium Indium Nitrides Mixed
3Growth mechanism
3Indium arsenides
3Stress relaxation
3Temperature effects
2Adatoms
2Atomic force microscopy
2Carrier density
2Composition effect
2Diffusion
2Electroluminescence
2Energy-level transitions
2Epitaxial layers
2Excitation spectrum
2Gallium compounds
2Gallium nitrides
2Hall effect
2Heterostructures
2III-V compound
2Imaging
2Indium
2Indium compounds
2Indium nitrides
2Island structure
2Lateral growth
2Optical properties
2Optical transition
2Quantum wells
2Semiconductor epitaxial layers
2Spatial resolution
2Surface diffusion
2Ternary compounds
2Thick films
1Absorption spectra
1Activation energy
1Aluminium Indium Arsenides Mixed
1Aluminium compounds
1Aluminium nitrides
1Aluminium oxide
1Annealing
1Barrier layer
1Binary compound
1Binary compounds
1CVD
1Carrier mobility
1Close packing
1Coatings
1Compressive stress
1Conduction band
1Continuous wave lasers
1Crystal defects
1Crystal growth from vapors
1Current density
1Defect density
1Defect formation
1Defects
1Density
1Desorption
1Dislocation
1Dislocations
1Donor center
1Droplets
1EBIC
1Edge dislocations
1Electric field effects
1Envelope function
1Epitaxy
1Etching
1Fabrication property relation
1Fluctuations
1Gallium
1Gallium Arsenides nitrides
1Gallium Indium Arsenides Mixed
1Growth rate
1High performance
1High resolution
1Hydrostatic pressure
1Injection laser
1Inorganic compound
1Integrated intensity
1Interband transition
1Interband transitions
1Interdiffusion
1Interfaces
1Kinetics
1Lamellar structure
1Light emitting diodes

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