Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « D. G. Zhao »
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D. G. Wu < D. G. Zhao < D. Gao  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000581 (2012) Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
000600 (2012) Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
000B11 (2010) Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
000C23 (2010) Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer
000C82 (2009) The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
000C83 (2009) The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
000D17 (2009) Suppression of indium droplet formation by adding CC14 during metalorganic chemical vapor deposition growth of InN films
000E16 (2009) Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
001065 (2008) Photoelectric characteristics of metal/InGaN/GaN heterojunction structure
001110 (2008) Investigation on the structural origin of n-type conductivity in InN films
001216 (2008) Cathodoluminescence study of GaN-based film structures
001996 (2004) Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers

List of associated KwdEn.i

Nombre de
documents
Descripteur
8Indium nitride
7MOCVD
5Cathodoluminescence
5Gallium nitride
5XRD
4Thin films
3Epitaxial layers
3Gallium Indium Nitrides Mixed
3Multiple quantum well
3Spectral line shift
3Stress relaxation
3Temperature effects
2Adatoms
2Atomic force microscopy
2Carrier density
2Fluctuations
2Growth mechanism
2Hall effect
2Heterostructures
2III-V compound
2III-V semiconductors
2Imaging
2Indium
2Island structure
2Lateral growth
2Optical properties
2Photoluminescence
2Spatial resolution
2Surface diffusion
2Thick films
1Activation energy
1Aluminium nitrides
1Aluminium oxide
1Binary compound
1Carrier mobility
1Chemical composition
1Close packing
1Compressive stress
1Crystal defects
1Defect density
1Defect formation
1Density
1Desorption
1Diffusion
1Dislocation
1Donor center
1Droplets
1EBIC
1Edge dislocations
1Electric field effects
1Electroluminescence
1Epitaxy
1Etching
1Experimental study
1Fabrication property relation
1Gallium
1Gallium nitrides
1Growth rate
1High resolution
1Indium nitrides
1Injection laser
1Interdiffusion
1Interfaces
1Kinetics
1Lamellar structure
1Localized states
1Luminescence
1Mechanical properties
1Metal-semiconductor contacts
1Misfit dislocations
1N type conductivity
1Nanocolumn
1Nanoparticles
1Nanostructures
1Photoconductivity
1Photodetectors
1Plasticity
1Point defect
1Polarization
1Positron annihilation
1Precursor
1Quaternary alloys
1Quaternary compounds
1Reaction mechanism
1Red shift
1Roughness
1Satellite lines
1Schottky barriers
1Secondary electron
1Secondary ion mass spectra
1Secondary ion mass spectrometry
1Semiconductor materials
1Smooth surface
1Spectral response
1Template reaction
1Ternary compound
1Threading dislocation
1p n junction

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