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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « C. Lin »
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C. Liang < C. Lin < C. Liu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000E48 (2009) Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy
001368 (2007) Key issues associated with low threshold current density for InP-based quantum cascade lasers
001B30 (2003) The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors
001E87 (2001) Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers
001F09 (2001) Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers
001F25 (2001) Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy
001F27 (2001) MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes
002062 (2000) Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100)
002221 (1999) The effect of strain on the miscibility gap in Ga-In-Sb ternary alloy
002273 (1999) Fatigue-free Pb(Zr0.52Ti0.48)O3 thin films on indium tin oxide coated substrates by a sol-gel process
002378 (1998) Novel In0.49Ga0.51P./(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Molecular beam epitaxy
6Experimental study
6Gallium antimonides
6Gallium arsenides
6Indium antimonides
6Indium arsenides
4III-V semiconductors
3Aluminium arsenides
3GSMBE method
3Indium phosphides
3Photoluminescence
3Quaternary compounds
3Semiconductor lasers
3Ternary compounds
3Thin films
2Aluminium antimonides
2Binary compounds
2Crystal growth from vapors
2Dark current
2Epitaxial layers
2Gallium phosphides
2III-V compound
2Infrared detector
2Infrared laser
2Laser diodes
2Microelectronic fabrication
2Multiple quantum well
2Output power
2Performance evaluation
2Photodetector
2Quantum well lasers
2Quaternary compound
2Semiconductor materials
2Threshold current
1Aluminium compounds
1Antimonides arsenides
1Antimony
1Atomic force microscopy
1Binary compound
1Bipolar transistors
1Calculation methods
1Compressive stress
1Current density
1Doping
1Feedback
1Ferroelectric hysteresis
1Ferroelectricity
1Gallium compounds
1Growth mechanism
1Hall mobility
1Heterojunction transistor
1Heterojunctions
1IV characteristic
1Indium additions
1Indium compounds
1Infrared detectors
1Injection laser
1Interfaces
1Lead titanates
1Lead zirconates
1Leakage currents
1Microstructure
1Mid infrared radiation
1Miscibility gap
1Mismatch lattice
1Modulation
1Monolayers
1Multilayers
1Operating conditions
1Optical transition
1Optical waveguides
1P type conductivity
1PZT
1Passivation
1Perovskites
1Phosphides
1Photodiodes
1Plasmons
1Polarization
1Quantum wells
1Rapid thermal annealing
1Residual stresses
1Ridge waveguides
1Rocking curve
1Sol-gel process
1Solid source molecular beam epitaxy
1Solid source molecular beam epitaxy method
1Spectral response
1Strained quantum well
1Stress relaxation
1Superlattices
1Temperature dependence
1Tensile stress
1Theoretical study
1Thick films
1Thickness
1Transmission electron microscopy
1Voltage current curve
1XRD
1p i n photodiodes

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