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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « C. F. Cao »
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C. E. Zhou < C. F. Cao < C. F. Cheng  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000242 (2013) Growth of metamorphic InGaP layers on GaAs substrates
000378 (2012) Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
000441 (2012) Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films
000463 (2012) Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy
000730 (2011) Quantum dot lasers grown by gas source molecular-beam epitaxy
000B26 (2010) InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
5GSMBE method
4Continuous wave
4III-V compound
4III-V semiconductors
4Indium arsenides
4Molecular beam epitaxy
4Quantum dot lasers
3Gallium arsenides
3Indium phosphide
3Nanostructured materials
3Quantum dots
3Semiconductor lasers
2Layer thickness
2Monolayers
2Ridge waveguides
2Temperature dependence
2Waveguide lasers
1Absorption spectra
1Binary compounds
1Calcium nitride
1Density of states
1Dielectric function
1Doping
1Drude model
1Effective mass
1Epitaxial layers
1Free carrier
1Growth mechanism
1Impurity density
1Indium
1Infrared spectra
1Injection current
1Lorentz law
1Low temperature
1Microelectronic fabrication
1Morphology
1Optical constants
1Optimization
1Output power
1Phosphides
1Photoluminescence
1Quantum well lasers
1Quantum wells
1Quantum yield
1Reflection spectrum
1Roughness
1Size effect
1Stress effects
1Temperature effects
1Thermal characteristic
1Thick films
1Threading dislocation

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EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "C. F. Cao" \
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