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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « C. C. Yang »
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C. C. Wu < C. C. Yang < C. C. Yeh  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
001571 (2006) Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
001873 (2004-06-28) Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
001884 (2004-05-15) Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing
001898 (2004-04-05) Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
001A60 (2003-11-10) Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31
001A92 (2003-06-15) Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells
001B08 (2003-03-03) Strong green luminescence in quaternary InAlGaN thin films
001C58 (2002-10-15) Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
001C79 (2002-06-10) Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures
001C92 (2002-04-08) Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells
001D55 (2002) Melting enthalpy depression of nanocrystals
001F91 (2000-11-06) Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
002040 (2000-01-17) Stimulated emission study of InGaN/GaN multiple quantum well structures
002636 (1995-10-09) Nonlinear polarization switching in a semiconductor single quantum well optical amplifier

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Experimental study
12III-V semiconductors
11Gallium compounds
11Indium compounds
10Photoluminescence
8Semiconductor quantum wells
8Wide band gap semiconductors
4Aggregation
4Annealing
4Transmission electron microscopy
3Localized states
3Quantum confined Stark effect
3Semiconductor thin films
3Spectral line shift
3XRD
2Cathodoluminescence
2Electron-hole recombination
2Interface states
2Line intensity
2MOCVD coatings
2Phase separation
2Spinodal decomposition
1Aluminium compounds
1Amplifiers
1Band structure
1Buffer layer
1CVD
1Carrier mobility
1Chemical composition
1Chemical interdiffusion
1Crystal growth from vapors
1Deep energy levels
1Defect states
1Electroluminescence
1Electron traps
1Energy gap
1Enthalpy
1Epitaxial layers
1Excitons
1Fluctuations
1Gain
1Gallium arsenides
1Gallium nitrides
1Hole traps
1Indium
1Indium arsenides
1Indium nitrides
1Interface structure
1Internal stresses
1Light emitting diodes
1Line narrowing
1MOCVD
1Melting
1Melting points
1Monolayers
1Nanocrystal
1Nanostructured materials
1Phase transformations
1Polarization
1Precipitation
1Quantum wells
1Radiative recombination
1Saturation
1Semiconductor doping
1Semiconductor quantum dots
1Silicon
1Size effect
1Stimulated emission
1Stoichiometry
1Stress relaxation
1Switches
1Switching
1TEM
1Temperature dependence
1Ternary compounds
1Theoretical study
1Thin films
1Time resolved spectra
1Transition temperature

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